Related papers: Maskless laser processing of graphene
Ultrafast lasers are ideal tools to process transparent materials because they spatially confine the deposition of laser energy within the material's bulk via nonlinear photoionization processes. Nonlinear propagation and filamentation were…
Graphene is at the centre of nanotechnology research. In order to fully exploit its outstanding properties, a mass production method is necessary. Two main routes are possible: large-scale growth or large-scale exfoliation. Here, we…
Graphene layers were created on both C and Si faces of semi-insulating, on-axis, 4H- and 6H-SiC substrates. The process was performed under high vacuum (<10-4 mbar) in a commercial chemical vapor deposition SiC reactor. A method for H2…
Graphene stands as a promising material with vast potential across energy storage, electronics, etc. Here, we present a novel mechanical approach utilizing ultrasonic high-energy intercalation exfoliation to extract monolayer graphene from…
Growth of perovskite oxide thin films on Si in crystalline form has long been a critical obstacle for the integration of multifunctional oxides into Si-based technologies. In this study, we propose pulsed laser deposition of a crystalline…
Graphene as a single-atomic-layer material is fully exposed to environment and has therefore a great potential for creating of sensitive gas sensors. However, in order to realize this potential for different polluting gases, graphene has to…
we have fabricated transparent electronic devices based on graphene materials with thickness down to one single atomic layer by the transfer printing method. The resulting printed graphene devices retain high field effect mobility and have…
The optical properties of dielectric plates coated with gapped graphene are investigated on the basis of first principles of quantum electrodynamics. The reflection coefficients and reflectivities of graphene-coated plates are expressed in…
Microfabrication of graphene devices used in many experimental studies currently relies on the fact that graphene crystallites can be visualized using optical microscopy if prepared on top of silicon wafers with a certain thickness of…
Depth profiling of graphene with high-resolution ion beam analysis is a practical method for analysis of monolayer thicknesses of graphene. Not only is the energy resolution sufficient to resolve graphene from underlying SiC, but by use of…
Graphene based sheets have stimulated great interest due to their superior mechanical, electrical and thermal properties. A general visualization method that allows quick observation of these single atomic layers would be highly desirable…
Plasma surface modification was used to fabricate graphene on the top of insulating diamond-like carbon films. It is shown that by a combination of pulsed argon plasma treatment and thermal annealing at 350\degreeC is possible to achieve…
We show that it is possible to prepare and identify ultra--thin sheets of graphene on crystalline substrates such as SrTiO$_3$, TiO$_2$, Al$_2$O$_3$ and CaF$_2$ by standard techniques (mechanical exfoliation, optical and atomic force…
Graphene has recently attracted a great deal of interest in both academia and industry because of its unique electronic and optical properties [1,2], as well as its chemical, thermal, and mechanical properties. The superb characteristics of…
We present a safe, clean, convenient, and easy-to-control method for extensive fluorination of graphene using laser-ablation-assisted decomposition of gaseous SF6 molecules.
Manipulating and controlling the optical energy flow inside random media is a research frontier of photonics and the basis of novel laser designs. In particular, light amplification in randomly dispersed active inclusions under external…
Graphene consists of single or few layers of crystalline ordered carbon atoms. Its visibility on oxidized silicon (Si/SiO\_2) enabled its discovery and spawned numerous studies of its unique electronic properties. The combination of…
Contact angle goniometry is conducted for epitaxial graphene on SiC. Although only a single layer of epitaxial graphene exists on SiC, the contact angle drastically changes from 69{\deg} on SiC substrates to 92{\deg} with graphene. It is…
We report an approach to synthesize high quality graphene by surface segregation and substrate transfer. Graphene was segregated from Ni surface under the ambient pressure by dissolving carbon in Ni at high temperatures followed by cooling…
We demonstrate a facile fabrication technique for graphene-based transparent conductive films. Highly flat and uniform graphene films are obtained through the incorporation of an efficient laser annealing technique with one-time drop…