Related papers: Maskless laser processing of graphene
We theoretically investigate the plasmonic heating of graphene-based systems under the mid-infrared laser irradiation, where periodic arrays of graphene plasmonic resonators are placed on dielectric thin films. Optical resonances are…
Practical applications of graphene require a reliable high-throughput method of graphene identification and quality control, which can be used for large-scale substrates and wafers. We have proposed and experimentally tested a fast and…
We present in-situ Raman measurements of laser-induced oxidation in exfoliated single-layer graphene. By using high-power laser irradiation, we can selectively and in a controlled way initiate the oxidation process and investigate its…
Laser processing of graphene is of great interest for cutting, patterning and structural engineering purposes. Tunable nanosecond lasers have the advantage of being relatively widespread (compared to e.g. femtosecond or high-power…
Using a scanning electron microscope, we observed a reproducible, discrete distribution of secondary electron intensity stemming from an atomically thick graphene film on a thick insulating substrate. The discrete distribution made it…
In this paper we show how single layer graphene can be utilized to study swift heavy ion (SHI) modifications on various substrates. The samples were prepared by mechanical exfoliation of bulk graphite onto SrTiO$_3$, NaCl and Si(111),…
We have experimentally investigated the expansion mechanism induced by laser irradiation of H2SO4 intercalated graphite. Intercalated graphite materials irradiated by laser allows to study reactions occurring in confined chemical…
The use of graphene electronics in space will depend on the radiation hardness of graphene. The damage threshold of graphene samples, subjected to 2 MeV proton irradiation, was found to increase with layer number and also when the graphene…
We evaluate the optical reflectivity for a uniaxially strained graphene single layer between a SiO2 substrate and air. A tight binding model for the band dispersion of graphene is employed. As a function of the strain modulus and direction,…
A simple, non-invasive method using Raman spectroscopy for the estimation of the thickness of graphene layers grown epitaxially on silicon carbide (SiC) is presented, enabling simultaneous determination of thickness, grain size and disorder…
Selective thin-film removal is needed in many microfabrication processes such as 3-D patterning of optoelectronic devices and localized repairing of integrated circuits. Various wet or dry etching methods are available, but laser machining…
We investigate selective patterning of ultra-thin 20 nm Indium Tin Oxide (ITO) thin films on glass substrates, using 343, 515, and 1030 nm femtosecond (fs), and 1030 nm picoseconds (ps) laser pulses. An ablative removal mechanism is…
Graphene has many unique properties that make it an ideal material for fundamental studies as well as for potential applications. Here we review the recent results on the Raman spectroscopy and imaging of graphene. Raman spectroscopy and…
A simple and effective stepwise-method has been developed to remove defects from the top graphene layers of highly orientated pyrolytic graphite. Using a combination of ozone exposure and moderately high temperature we have shown that a…
Graphene is of increasing interest for optoelectronic applications exploiting light detection, light emission and light modulation. Intrinsically light matter interaction in graphene is of a broadband type. However by integrating graphene…
Imaging ellipsometry studies of graphene on SiO2/Si and crystalline GaAs are presented. We demonstrate that imaging ellipsometry is a powerful tool to detect and characterize graphene on any flat substrate. Variable angle spectroscopic…
The realization of optoelectronic devices on paper has been an outstanding challenge due to the large surface roughness and incompatible nature of paper with optical materials. Here, we demonstrate a new class of optoelectronic devices on a…
The inclusion of semiconducting material within a composite barrier enables the perfectly uniform propagation of surface ionization waves (SIW) in air at atmospheric pressure regardless of the polarity of the applied electric field, unlike…
The removal of single atomic layers from multi-layer graphene using a He plasma is reported. By applying sample biases of -60 and +60 V during He plasma exposure, layer removal is found to be due to electrons instead of He ions or neutrals…
We discuss the properties of surface plasmons-polaritons in graphene and describe three possible ways of coupling electromagnetic radiation in the terahertz (THz) spectral range to this type of surface waves. (i) the attenuated total…