Related papers: Breaking molecular nitrogen under mild conditions …
In this work, we studied cobalt nitride (Co-N) thin films deposited using a dc magnetron sputtering method at a substrate temperature (\Ts) of 523\,K. We find that independent of the reactive gas flow (\pn) used during sputtering, the…
Nitride films are promising for advanced optoelectronic and electronic device applications. However, some challenges continue to impede development of high aluminum-containing devices. The two major difficulties are growth of high…
The magnetization (M) as a function of temperature (T) from 2 to 300 K and in-plane field (H) up to 1 kOe, room temperature easy and hard direction in-plane field hysteresis loops for fields between -100 and +100 Oe, and 10 GHz…
NbO2 is a potential material for nanometric memristor devices, both in the amorphous and the crystalline form. We fabricated NbO2 thin films using RF-magnetron sputtering from a stoichiometric target. The as-deposited films were amorphous…
Strontium doped lanthanum manganite thin films were deposited by pulsed laser deposition on yttria stabilized zirconia single crystals for a comprehensive electrochemical characterization of the material acting as a cathode. A physically…
The layered structure of tetragonal Ni(CN)2, consisting of square-planar Ni(CN)4 units linked in the a-b plane, with no true periodicity along the c-axis, is expected to show anisotropic compression on the application of pressure.…
NbN films are grown on c-plane sapphire substrates by molecular beam epitaxy. The structural and superconducting properties of the film are characterized to demonstrate that growth parameters such as substrate temperature and active…
Nitrogen, the most abundant element in Earth's atmosphere, exists as a diatomic gas under standard temperature and pressure. In the two-dimensional (2D) limit, atomically thin nitrogen, termed nitrogene, has been theoretically predicted to…
The nitrogen substitution into the oxygen sites of several oxide materials leads to a reduction of the band gap to the visible light energy range, which makes these oxynitride semiconductors potential photocatalysts for efficient solar…
The phase transition in CrN epitaxial films is substantially suppressed by epitaxial constraint. Here, we propose that nitrogen (N) vacancies can be taken as a knob to regulate the phase transition of CrN(111) epitaxial films. To validate…
Chromium nitride (CrN) is a well-known hard coating material that has found applications in abrasion and wear-resistant cutting tools, bearings, and tribology applications due to its high hardness, high-temperature stability, and…
The recently reported superconductivity 9-15 K in Nd0.8Sr0.2NiO2/SrTiO3 heterostructures that were fabricated by a soft-chemical topotactic reduction approach based on precursor Nd0.8Sr0.2NiO3 thin films deposited on SrTiO3 substrates, has…
We report a new in-situ reactive deposition thin film growth technique for the production of MgB2 thin films which offers several advantages over all existing methods and is the first deposition method to enable the production of…
Vanadium oxide films and fibers have been fabricated by the acetylacetonate sol-gel method followed by annealing in wet nitrogen. The samples are characterized by X-ray diffraction and electrical conductivity measurements. The effects of a…
Brownian thermal noise of thin-film coatings is a fundamental limit for high-precision experiments based on optical resonators such as gravitational-wave interferometers. Here we present the results of a research activity aiming to develop…
The objective of this work was to study the RF sputtering process parameters optimisation for deposition of Silicon Nitride thin films. The process parameters chosen to be varied were deposition power, deposition duration, flow rate of…
We report on the layer-by-layer growth of single-crystal Al2O3 thin-films on Nb (110). Single-crystal Nb films are first prepared on A-plane sapphire, followed by the evaporation of Al in an O2 background. The first stages of Al2O3 growth…
Recently, hexagonal boron nitride (hBN) layers have generated a lot of interest as ideal substrates for 2D stacked devices. Sapphire-supported thin hBN films of different thicknesses are grown using metalorganic vapour phase epitaxy…
A high-yield production of high-quality boron-nitride nanotubes (BNNTs) was reported recently in several publications. A boron-rich material is evaporated by a laser or plasma in a nitrogen-rich atmosphere to supply precursor gaseous…
Understanding the air-stability of MnBi$_2$Te$_4$ thin films is crucial for the development and long-term operation of electronic devices based around magnetic topological insulators. In the present work, we study MnBi$_2$Te$_4$ thin films…