Related papers: Single-electron charge sensing in self-assembled q…
Sequential single-electron charging is observed in InAs Self-Assembled Quantum Dots using capacitance spectroscopy. In this system, the Coulomb energy is smaller than the inter-level energy spacings due to the quantum confinement and both…
Laterally coupled charge sensing of quantum dots is highly desirable, because it enables measurement even when conduction through the quantum dot itself is suppressed. In this work, we demonstrate such charge sensing in a double top gated…
We propose an all optical spin initialization and readout concept for single self assembled quantum dots and demonstrate its feasibility. Our approach is based on a gateable single dot photodiode structure that can be switched between…
Increasing the separation between semiconductor quantum dots offers scaling advantages by fa- cilitating gate routing and the integration of sensors and charge reservoirs. Elongated quantum dots have been utilized for this purpose in GaAs…
The recent realization of coherent single-electron sources in ballistic conductors let us envision performing time-resolved electronic interferometry experiments analogous to quantum optics experiments.One could eventually use propagating…
Charge sensing in quantum-dot structures is studied by an exactly solvable reduced model and numerical density-matrix renormalization group methods. Charge sensing is characterized by the repeated cycling of the occupation of…
We demonstrate real-time detection of self-interfering electrons in a double quantum dot embedded in an Aharonov-Bohm interferometer, with visibility approaching unity. We use a quantum point contact as a charge detector to perform…
Single electron charging in an individual InAs quantum dot was observed by electrostatic force measurements with an atomic force microscope (AFM). The resonant frequency shift and the dissipated energy of an oscillating AFM cantilever were…
Reliable detection of single electron tunneling in quantum dots (QD) is paramount to use this category of device for quantum information processing. Here, we report charge sensing in a degenerately phosphorus-doped silicon QD by means of a…
We perform quantum Hall measurements on three types of commercially available modulation doped Si/SiGe heterostructures to determine their suitability for depletion gate defined quantum dot devices. By adjusting the growth parameters, we…
Single molecules that exhibit narrow optical transitions at cryogenic temperatures can be used as local electric-field sensors. We derive the single charge sensitivity of aromatic organic dye molecules, based on first principles. Through…
The unpredictability of a single quantum event lies at the very core of quantum mechanics. Physical information is therefore drawn from a statistical evaluation of many such processes. Nevertheless, recording each single quantum event in a…
The electron spin state of a singly charged semiconductor quantum dot has been shown to form a suitable single qubit for quantum computing architectures with fast gate times. A key challenge in realizing a useful quantum dot quantum…
Controlling electrons at the level of elementary charge $e$ has been demonstrated experimentally already in the 1980's. Ever since, producing an electrical current $ef$, or its integer multiple, at a drive frequency $f$ has been in a focus…
We report on charge sensing measurements of a GaAs semiconductor quantum dot device using a radio frequency quantum point contact (rf-QPC). The rf-QPC is fully characterized at 4 K and milli-Kelvin temperatures and found to have a bandwidth…
Quasi-static transport measurements are employed on a laterally defined tunnel-coupled double quantum dot. A nearby quantum point contact allows us to track the charge as added to the device. If charged with only up to one electron, the…
We report on measurements of single electron tunneling through a quantum dot using a quantum point contact as non-invasive charge detector with fast time response. We elaborate on the unambiguous identification of individual tunneling…
Self-assembled semiconductor quantum dot is a new type of artificially designed and grown function material which exhibits quantum size effect, quantum interference effect, surface effect, quantum tunneling-Coulumb-blockade effect and…
Single-electron pumps based on semiconductor quantum dots are promising candidates for the emerging quantum standard of electrical current. They can transfer discrete charges with part-per-million (ppm) precision in nanosecond time scales.…
Charge-based quantum computation can be attained through reliable control of single electrons in lead-less quantum systems. Single-charge transitions in electrically-isolated double quantum dots (DQD) realised in phosphorus-doped silicon…