Related papers: Single layer MoS2 nanoribbon field effect transist…

We present a computational study on the impact of line defects on the electronic properties of monolayer MoS2. Four different kinds of line defects with Mo and S as the bridging atoms, consistent with recent theoretical and experimental…

Transition metal dichalcogenides (TMDCs) are promising materials for applications in nanoelectronics and correlated fields, where their metallic edge states play a fundamental role in the electronic transport. In this work, we investigate…

The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N = 1, 2, ... 6 S-Mo-S monolayers have been investigated by optical spectroscopy. Through characterization by absorption, photoluminescence, and…

In our previous paper, we reported on switchable monolayer MoS2 transistors with a high on-off ratio and we claim that dielectric screening can be used to increase the mobility of monolayer MoS2. We estimated its mobility using a method…

The sensitive dependence of electronic and thermoelectric properties of MoS$_2$ on the applied strain opens up a variety of applications in the emerging area of straintronics. Using first principles based density functional theory…

The transition-metal dichalcogenides (TMD) MoS2 and WS2 show remarkable electromechanical properties. Strain modifies the direct band gap into an indirect one, and substantial strain even induces an semiconductor-metal transition. Providing…

We report field-effect transistors (FETs) with single-crystal molybdenum disulfide (MoS2) channels synthesized by chemical vapor deposition (CVD). For a bilayer MoS2 FET, the mobility is ~17 cm2V-1s-1 and the on/off current ratio is ~108,…

Strain engineering is an important method for tuning the properties of semiconductors and has been used to improve the mobility of silicon transistors for several decades. Recently, theoretical studies have predicted that strain can also…

Here, we demonstrate the fabrication of single-layer MoS2 mechanical resonators. The fabricated resonators have fundamental resonance frequencies in the order of 10 MHz to 30 MHz (depending on their geometry) and their quality factor is…

We study the photoresponse of single-layer MoS2 field-effect transistors by scanning photocurrent microscopy. We find that, unlike in many other semiconductors, the photocurrent generation in single-layer MoS2 is dominated by the…

Single layer molybdenum disulfide (SLMoS2), a semiconductor possesses intrinsic bandgap and high electron mobility, has attracted great attention due to its unique electronic, optical, mechanical and thermal properties. Although thermal…

We realize and investigate ionic liquid gated field-effect transistors (FETs) on large-area MoS2 monolayers grown by chemical vapor deposition (CVD). Under electron accumulation, the performance of these devices is comparable to that of…

Atomically thin semiconductors have versatile future applications in the information and communication technologies for the ultimate miniaturization of electronic components. In particular, the ongoing research demands not only a…

Large capacitance enhancement is useful for increasing the gate capacitance of field-effect transistors (FETs) to produce low-energy-consuming devices with improved gate controllability. We report strong capacitance enhancement effects in a…

We study the elastic deformation of few layers (5 to 25) thick freely suspended MoS2 nanosheets by means of a nanoscopic version of a bending test experiment, carried out with the tip of an atomic force microscope. The Young's modulus of…

We report a systematic study of the etching of MoS2 crystals by using XeF2 as a gaseous reactant. By controlling the etching process, monolayer MoS2 with uniform morphology can be obtained. The Raman and photoluminescence spectra of the…

MoS2 atomic layers have recently attracted much interest because of their two-dimensional structure as well as tunable optical, electrical, and mechanical properties for next generation electronic and electro-optical devices. Here we have…

A common issue in low temperature measurements of enhancement-mode metal-oxide-semiconductor (MOS) field-effect transistors (FETs) in the low electron density regime is the high contact resistance dominating the device impedance. In that…

Two dimensional (2D) materials such as graphene and transition metal dichalcogenides (TMDC) have received extensive research interests and investigations in the past decade. In this research, we report the first experimental measurement of…

In this work, we demonstrate a dual-gated (DG) MoS2 field effect transistors (FETs) in which the degraded switching performance of multilayer MoS2 can be compensated by the DG structure. It produces large current density (>100 {\mu}A/{\mu}m…