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We review vibrational and electronic properties of single and a few layer MoS$_2$ relevant to understand their resonant and non-resonant Raman scattering results. In particular, the optical modes and low frequency shear and layer breathing…

Mesoscale and Nanoscale Physics · Physics 2015-02-13 Achintya Bera , A. K. Sood

The exfoliation of layered magnetic materials generates atomically thin flakes characterized by an ultrahigh surface sensitivity, which makes their magnetic properties tunable via external stimuli, such as electrostatic gating and proximity…

Fe3-xGeTe2 is a layered magnetic van der Waals material of interest for both fundamental and applied research. Despite the observation of intriguing physical properties, open questions exist even on the basic features related to magnetism:…

Molecular beam epitaxy technique has been used to deposit a single layer and a bilayer of MoSe 2 on sapphire. Extensive characterizations including in-situ and ex-situ measurements show that the layered MoSe 2 grows in a scalable manner on…

We perform detailed magnetotransport studies on two-dimensional electron gases (2DEGs) formed in undoped Si/SiGe heterostructures in order to identify the electron mobility limiting mechanisms in this increasingly important materials…

Mesoscale and Nanoscale Physics · Physics 2015-07-24 X. Mi , T. M. Hazard , C. Payette , K. Wang , D. M. Zajac , J. V. Cady , J. R. Petta

Proximity effects in two-dimensional (2D) van der Waals heterostructures offer controllable ways to tailor the electronic band structure of adjacent materials. Exchange proximity in particular is important for making materials magnetic…

Mesoscale and Nanoscale Physics · Physics 2019-09-04 Klaus Zollner , Paulo E. Faria Junior , Jaroslav Fabian

Van der Waals torque determines the relative rotational motion between anisotropic objects, being of relevance to low-dimensional systems. Here we demonstrate a substantial torque between anisotropic two-dimensional materials that arises…

Computational Physics · Physics 2024-12-17 Zepu Kou , Yuquan Zhou , Zonghuiyi Jiang , Alexandre Tkatchenko , Xiaofei Liu

This work presents a survey of mechanical models describing van der Waals interactions between 2D materials, encompassing both continuous elastomer-like materials and discrete (crystalline) 2D materials such as graphene. These interactions…

Computational Physics · Physics 2025-12-30 Gourav Yadav , Shakti S. Gupta , Roger A. Sauer

Two-dimensional van der Waals heterostructures are potential game changers both in understanding the fundamental physics and in the realization of various devices that exploit magnetism at the nanoscale. Multiferroic heterostructures…

Materials Science · Physics 2024-12-12 Himangshu Sekhar Sarma , Subhradip Ghosh

Both van der Waals corrected density functional theory and classical calculations show that the potential relief of interaction energy between layers of graphite and few-layer graphene can be described by a simple expression containing only…

Mesoscale and Nanoscale Physics · Physics 2015-06-05 Andrey M. Popov , Irina V. Lebedeva , Andrey A. Knizhnik , Yurii E. Lozovik , Boris V. Potapkin

We report first-principles calculations of the structural and vibrational properties of the synthesized two-dimensional van der Waals heterostructures formed by single-layers dichalcogenides MoSe2 and WSe2. We show that, when combining…

Materials Science · Physics 2022-01-26 F. Mahrouche , K. Rezouali , F. Zaabar , A. Molina-Sánchez

Rare-earth tritellurides are van-der-Waals antiferromagnets which have been attracting attention as materials not only with high mobility, but also with various states such as superconductivity under high pressure, incommensurate…

We performed detailed studies of the current-voltage characteristics in graphene/MoS2/metal vertical field-effect transistors. Owing to its low density of states, the Fermi level in graphene is very sensitive to its carrier density and thus…

Mesoscale and Nanoscale Physics · Physics 2015-06-03 Rai Moriya , Takehiro Yamaguchi , Yoshihisa Inoue , Yohta Sata , Sei Morikawa , Satoru Masubuchi , Tomoki Machida

The attachment of redox active molecules to transition metal dichalcogenides (TMDs), such as MoS2, constitutes a promising approach for designing electrochemically switchable devices through the control of the material charge/spin transport…

The electrical performance of two dimensional transitional metal dichalcogenides (TMDs) is strongly influenced by the amount of structural defects inside. In this work, we provide an optical spectroscopic characterization approach to…

Two-dimensional (2D) van der Waals (vdW) ferromagnets have emerged as a critical class of quantum materials for next-generation, low-dimensional spintronic devices. In this study, we report a comprehensive study of the transport properties…

Superconductivity · Physics 2026-02-10 Suchanda Mondal , Shubhankar Roy , Poulami Manna , Ravi Prakash Singh

Through infrared spectroscopy, we systematically study the pressure effect on electronic structures of few-layer black phosphorus (BP) with layer number ranging from 2 to 13. We reveal that the pressure-induced shift of optical transitions…

For conventional materials, the thermal conductivity of thin film is usually suppressed when the thickness decreases due to phonon-boundary scattering. However, this is not necessarily true for the van der Waals solids if the thickness is…

Materials Science · Physics 2016-03-01 Xiaokun Gu , Baowen Li , Ronggui Yang

Atomically thin MoSe2 is a promising platform for investigating quantum phenomena due to its large effective mass, high crystal quality, and strong spin-orbit coupling. In this work, we demonstrate a triple-gate device design with bismuth…

Mesoscale and Nanoscale Physics · Physics 2025-05-05 Chang Liu , Tongtong Jia , Zheng Sun , Yu Gu , Fan Xu , Kenji Watanabe , Takashi Taniguchi , Jinfeng Jia , Shiyong Wang , Xiaoxue Liu , Tingxin Li

We report low temperature scanning tunneling microscopy characterization of MoSe2 crystals, and the fabrication and electrical characterization of MoSe2 field-effect transistors on both SiO2 and parylene-C substrates. We find that the…

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