The electrical performance of two dimensional transitional metal dichalcogenides (TMDs) is strongly influenced by the amount of structural defects inside. In this work, we provide an optical spectroscopic characterization approach to correlate the amount of structural defects and the electrical performance of WSe2 devices. Low temperature photoluminescence (PL) spectra of electron beam lithography (EBL) processed WSe2 presents a clear defect-induced PL emission due to excitons bound to defects, which would strongly degrade the electrical performance. By adopting an e-beam-free transfer-electrode technique, we are able to prepare backgated WSe2 device with limited amount of defects. A maximum hole-mobility of about 200 cm2/Vs was achieved due to reduced scattering sources, which is the highest reported value among its type. This work would not only provide a versatile and nondestructive method to monitor the defects in TMDs, but also a new route to approach the room temperature phonon-limited mobility in high performance TMDs devices.
@article{arxiv.1608.02043,
title = {Defects as a factor limiting carrier mobility in WSe2: a spectroscopic investigation},
author = {Zhangting Wu and Zhongzhong Luo and Yuting Shen and Weiwei Zhao and Wenhui Wang and Haiyan Nan and Xitao Guo and Litao Sun and Xinran Wang and Yumeng You and Zhenhua Ni},
journal= {arXiv preprint arXiv:1608.02043},
year = {2017}
}