Related papers: Tunable inverse spin Hall effect in nanometer-thic…
We evidence the possibility for coherent electrical manipulation of the spin orientation of topologically protected edge states in a low-symmetry quantum spin Hall insulator. By using a combination of ab-initio simulations, symmetry-based…
Spin Hall effect provides an efficient tool for the conversion of a charge current into a spin current, opening the possibility of producing pure spin currents in non-magnetic materials for the next generation of spintronics devices. In…
We theoretically investigate the vortex spin Hall effect, i.e., a novel spin Hall effect driven by the motion of superconducting vortices, by focusing on the role of superconducting fluctuations. Within the BCS-Gor'kov microscopic approach…
An outstanding feature of topological quantum materials is their novel spin topology in the electronic band structures with an expected large charge-to-spin conversion efficiency. Here, we report a charge current-induced spin polarization…
We study the temperature dependence of the spin Hall magnetoresistance (SMR) in yttrium iron garnet/platinum hybrid structures via magnetization orientation dependent magnetoresistance measurements. Our experiments show a decrease of the…
We perform electric double-layer gating experiments on thin films of niobium nitride. Thanks to a cross-linked polymer electrolyte system of improved efficiency, we induce surface charge densities as high as $\approx 2.8 \times…
We discuss the transport properties of a quantum spin-Hall insulator with sizable Rashba spin-orbit coupling in a disk geometry. The presence of topologically protected helical edge states allows for the control and manipulation of spin…
The spin Hall effect (SHE), which converts a charge current into a transverse spin current, has long been believed to be a phenomenon induced by the spin--orbit coupling. Here, we propose an alternative mechanism to realize the intrinsic…
The external controllability of the magnetic properties in topological insulators would be important both for fundamental and practical interests. Here we predict the electric-field control of ferromagnetism in a thin film of insulating…
We examine the influence of crystal growth on the spin-pumping induced inverse spin Hall effect in Fe/Pt bilayers. The morphology of the Fe/Pt interface influences the effective spin mixing conductance. The increase of growth temperature…
Ferromagnetism and exotic topological structures in SrRuO$_3$ (SRO) induce sign-changing anomalous Hall effect (AHE). Recently, hump structures have been reported in the Hall resistivity of SRO thin films, especially in the ultra-thin…
The realization of a viable semiconductor transistor and information processing devices based on the electron spin has fueled intense basic research of three key elements: injection, detection, and manipulation of spins in the semiconductor…
Superconductivity (SC) in the Ba-122 family of iron-based compounds can be controlled by aliovalent or isovalent substitutions, applied external pressure, and strain, the combined effects of which are sometimes studied within the same…
Spin-orbit effects [1-4] have the potential of radically changing the field of spintronics by allowing transfer of spin angular momentum to a whole new class of materials. In a seminal letter to Nature [5], Kajiwara et al. showed that by…
Superconductivity can be induced in a normal material via the leakage of superconducting pairs of charge carriers from an adjacent superconductor. This so-called proximity effect is markedly influenced by graphene unique electronic…
A quantitative investigation of spin-pumping-induced spin-transport in n-GaAs was conducted at room temperature (RT). GaAs has a non-negligible spin orbit interaction, so that electromotive force due to the inverse spin Hall effect (ISHE)…
Spin-orbit coupling in graphene can be enhanced by chemical functionalization, adatom decoration or proximity with a van der Waals material. As it is expected that such enhancement gives rise to a sizeable spin Hall effect, a spin-to-charge…
Intrinsic contribution to the spin Hall effect in a two-dimensional silicene is considered theoretically within the linear response theory and Green function formalism. When an external voltage normal to the silicene plane is applied, the…
Photonic spin Hall effect in transmission is a transverse beam shift of the out-coming beam depending on polarization of the in-coming beam. The effect can be significantly enhanced by materials with high anisotropy. We report the first…
Spintronics has emerged as a promising field for next-generation devices, offering functionalities beyond complementary metal-oxide-semiconductor (CMOS). A critical challenge in spintronics is to develop systems that can efficiently…