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Quantum dot light-emitting diodes (QLEDs) are promising building blocks for prospective lighting and display applications. Despite the significant advancements achieved towards increasing the efficiency and brightness levels of QLEDs, the…
InGaAs Quantum Dots embedded in GaAs barriers, grown in inverted tetrahedral recesses of 7 {\mu}m edge, have showed interesting characteristics in terms of uniformity and spectral narrowness of the emission. In this paper we present a study…
The long dreamed quantum internet would consist of a network of quantum nodes (solid-state or atomic systems) linked by flying qubits, naturally based on photons, travelling over long distances at the speed of light, with negligible…
We investigate experimentally and theoretically few-particle effects in the optical spectra of single quantum dots (QDs). Photo-depletion of the QD together with the slow hopping transport of impurity-bound electrons back to the QD are…
Self-assembled, epitaxially-grown InAs/GaAs quantum dots are promising semiconductor quantum emitters that can be integrated on a chip for a variety of photonic quantum information science applications. However, self-assembled growth…
In strained heteroepitaxy, two-dimensional (2D) layers can exhibit a critical thickness at which three-dimensional (3D) islands self-assemble, relieving misfit strain at the cost of an increased surface area. Here we show that such a…
Single-photon sources are key building blocks in most of the emerging secure telecommunication and quantum information processing schemes. Semiconductor quantum dots (QD) have been proven to be the most prospective candidates. However,…
We report on a combined photoluminescence imaging and atomic force microscopy study of single, isolated self-assembled InAs quantum dots (density <0.01 um^(-2) capped by a 95 nm GaAs layer, and emitting around 950 nm. By combining optical…
Whereas the Si photonic platform is highly attractive for scalable optical quantum information processing, it lacks practical solutions for efficient photon generation. Self-assembled semiconductor quantum dots (QDs) efficiently emitting…
Next-generation scalable quantum photonic technologies operating at the single photon level rely on bringing together optimized quantum building blocks with minimal optical coupling losses. Achieving this necessitates the heterogeneous…
Quantum dots (QDs) based on III-nitride semiconductors are promising for single photon emission at non-cryogenic temperatures due to their large exciton binding energies. Here, we demonstrate GaN QD single photon emitters operating at 300 K…
We perform spatial point analysis of InAs quantum dot nucleation sites and surface reconstruction domain pattern on an InAs wetting layer, giving insights for quantum dot nucleation mechanism. An InAs wetting layer grown to 1.5 monolayers…
Conventional ultraviolet (UV) lamps for disinfection emit radiation in the 255-270 nm range, which poses a high risk of causing cancer and cataracts. To address these concerns, solid-state far UV-C sources emitting below 240 nm are gaining…
Cryogenic scanning tunneling microscopy was employed in combination with density-functional theory calculations to explore quantum dots made of In adatoms on the InAs(110) surface. Each adatom adsorbs at a surface site coordinated by one…
InAs quantum wells (QWs) grown on InP substrates are interesting for their applications in devices with high spin-orbit coupling (SOC) and their potential role in creating topologically nontrivial hybrid heterostructures. These QWs rely on…
GaAs-based nanowires hosting active quantum heterostructures provide a promising route toward monolithic integration of single-photon sources on silicon, a key requirement for scalable quantum photonics. However, ultrathin axial…
Materials with optical gain in the infrared are of paramount importance for optical communications, medical diagnostics and silicon photonics. The current technology is based either on costly III-V semiconductors that are not monolithic to…
Colloidal core/shell InP/ZnSe quantum dots (QDs), recently produced using an improved synthesis method, have a great potential in life-science applications as well as in integrated quantum photonics and quantum information processing as…
The generation of indistinguishable single photons is a fundamental requirement for future quantum technologies, particularly in quantum repeater networks and for distributed quantum computing based on entanglement distribution. However,…
We report quantum dots fabricated on very shallow 2-dimensional electron gases, only 30 nm below the surface, in undoped GaAs/AlGaAs heterostructures grown by molecular beam epitaxy. Due to the absence of dopants, an improvement of more…