Related papers: Excitons in InGaAs Quantum Dots without Electron W…
Spatially structured light fields applied to semiconductor quantum dots yield fundamentally different absorption spectra than homogeneous beams. In this paper, we theoretically discuss the resulting spectra for different light beams using a…
While electronic and spectroscopic properties of self-assembled In_{1-x}Ga_{x}As/GaAs dots depend on their shape, height and alloy compositions, these characteristics are often not known accurately from experiment. This creates a difficulty…
We investigate the optical emission and decay dynamics of excitons confined in large strain-free GaAs quantum dots grown by droplet epitaxy. From time-resolved measurements combined with a theoretical model we show that droplet-epitaxy…
We derive a general formalism to model the polariton states resulting from the radiation-matter interaction between an arbitrary number of excitonic transitions in semiconductor quantum dots and photon modes in a photonic crystal structure…
High-In-content InGaN quantum wells (QWs) in red light-emitting diodes (LEDs) are typically grown at low temperatures to ensure effective In incorporation. In this study, red LEDs based on bulk InGaN active region were demonstrated. The…
We use an $sp^3d^5s^* $ tight-binding model to investigate the electronic and optical properties of realistic site-controlled (111)-oriented InGaAs/GaAs quantum dots. Special attention is paid to the impact of random alloy fluctuations on…
The dynamic response of InAs/GaAs self-assembled quantum dots (QDs) to strain is studied experimentally by periodically modulating the QDs with a surface acoustic wave and measuring the QD fluorescence with photoluminescence and resonant…
A hallmark of integrable systems is the purely elastic scattering of their excitations. Such systems possess an extensive number of locally conserved charges, leading to the conservation of the number of scattered excitations, as well as…
Hereby, we present results of finite-difference time-domain simulations of technologically undemanding photonic structures offering a significant improvement in the spectrally broad extraction efficiency of emission from a quantum emitter…
Ultrathin InAs nanowires (NW) with one-dimensional (1D) sub-band structure are promising materials for advanced quantum-electronic devices, where dimensions in the sub-30 nm diameter limit together with post-CMOS integration scenarios on Si…
Exciton, trion and biexciton dephasing rates are measured within the inhomogeneous distribution of an InAs quantum dot (QD) ensemble using two-dimensional Fourier-transform spectroscopy. The dephasing rate of each excitonic state is similar…
Achieving deterministic placement of self-assembled quantum dots (QDs) during epitaxial growth is essential for the reliable and efficient fabrication of high-quality single-photon sources and solid-state cavity quantum electrodynamics…
A systematic study of the impact of annealing on the electronic properties of single InAs/GaAs quantum dots (QDs) is presented. We are able to record single QD cathodoluminescence spectra and trace the evolution of one and the same QD over…
Design, epitaxial growth, and resonant spectroscopy of CdSe Quantum Dots (QDs) embedded in an innovative (Zn,Cd)Se barrier are presented. The (Zn,Cd)Se barrier enables shifting of QDs energy emission down to 1.87 eV, that is below the…
The deterministic realization of quantum light sources operating at telecom wavelengths is essential for long-distance fiber-based quantum communication and distributed quantum computing. In this work, we demonstrate that telecom O-band…
Using resonantly excited photoluminescence along with photoluminescence excitation spectroscopies, we study the carrier excitation processes in CdTe/ZnTe and CdSe/ZnSe self-assembled quantum dots. Photoluminescence excitation spectra of…
This work presents a platform that enables surface acoustic wave (SAW) modulation of both intralayer and interlayer excitons in MoS2/WSe2 heterostructures. Harnessing the coupled piezoelectric and strain fields of SAWs, this integrated…
Photogenerated excitonic ensembles confined in coupled GaAs quantum wells are probed by a complementary approach of emission spectroscopy and resonant inelastic light scattering. Lateral electrostatic trap geometries are used to create…
Doping a self-assembled InGaAs/GaAs quantum dot (QD) with a single Mn atom, a magnetic acceptor impurity, provides a quantum system with discrete energy levels and original spin-dependent optical selection rules, which thus has large…
InAs self-assembled quantum dots were grown on strained layers of GaxIn1-xP (0 < x < 0.3) on InP substrates. We show that the quantum dots have narrow vertical dimensions, ranging between 2 to 10 monolayers only. The dot layer…