Related papers: Rectification in mesoscopic AC-gated semiconductor…
An oscillatory dependence of the drain current on the drain voltage is found in a nanostructure consisting of two crossing semiconductor carbon nanotubes that are suspended over a dielectric trench, which is backed by a doped silicon…
The recent demonstration of resonant tunneling transport in nitride semiconductors has led to an invigorated effort to harness this quantum transport regime for practical applications. In polar semiconductors, however, the interplay between…
Electrically stimulated switching of a charge injection barrier at the interface between an organic semiconductor and an electrode modified with a disordered monolayer (DM) is studied by using various benzenethiol derivatives as DM…
We investigate electric current in a single-electron tunnelling device weakly coupled to an ac-driven underdamped harmonic nanomechanical oscillator. In the linear regime, the current can respond to the external frequency in a resonant as…
The ability to execute high-fidelity operations is crucial to scaling up quantum devices to large numbers of qubits. However, signal distortions originating from non-linear components in the control lines can limit the performance of…
Detention ponds can mitigate flooding and improve water quality by allowing the settlement of pollutants. Typically, they are operated with fully open orifices and weirs (i.e., passive control). Active controls can improve the performance…
Atomically-thin 2D semiconducting materials integrated into van der Waals heterostructures have enabled architectures that hold great promise for next generation nanoelectronics. However, challenges still remain to enable their full…
The method for controlling a DC-DC converter is proposed to ensures the high quality control at large fluctuations in load currents by using differential gain control coefficients and second derivative control. Various implementations of…
Electrical current rectification is an interesting electronic feature, popularly known as a diode. Achieving a high rectification ratio in a molecular junction has been a long-standing goal in molecular electronics. The present work…
We demonstrate a controllable p$-$n junction in a three$-$dimensional Dirac semimetal (DSM) Cd$_3$As$_2$ nanowire with two recessed bottom gates. The device exhibits four different conductance regimes with gate voltages, the unipolar (n$-$n…
Modern microelectronic systems require long term operational stability, necessitating precise reliability models to predict device lifecycles and identify governing failure mechanisms. This is particularly critical for high power GaN…
Electronic transport in a triple quantum dot shuttle device in the presence of an ac field is analyzed within a fully quantum mechanical framework. A generalized density matrix formalism is used to describe the time evolution for electronic…
Diodes have a nonreciprocal voltage versus current relationship, produced by breaking the space and time reversal symmetry. However, developing high-end superconducting computers requires a superconducting analogue of the traditional…
The standard equations for semiconductor device analysis were solved by specifying the electron and hole current injected at a small contact, assuming high-level injection. Calculated current-voltage characteristics were fit to measurements…
New technology, the ultrastable low-noise current amplifier and the electron pump, provide new methods for making traceable measurements of small DC electric currents. We review four traceability routes for small current measurements and…
For enhancing power flow control in power transmission, a simplified new structure of direct power flow controller with continuous full regulation range (F-DPFC) was proposed. It has only one-stage power conversion and comprises of a…
We report electron counting experiments in a silicon metal-oxide-semiconductor quantum dot architecture which has been previously demonstrated to generate a quantized current in excess of 80 pA with uncertainty below 30 parts per million.…
We explore the possibility of inducing in heterostructures driven by an ac gate voltage the coherent current suppression recently found for nanoscale conductors in oscillating fields. The destruction of current is fairly independent of the…
We use the tip of an atomic force microscope (AFM) to charge floating metallic gates defined on the surface of a Si/SiGe heterostructure. The AFM tip serves as an ideal and movable cryogenic switch, allowing us to bias a floating gate to a…
Detailed experimental studies of the conductance of mesoscopic GaAs devices in the few-mode regime reveal a novel thermal effect: for temperatures up to at least 10 K the measured gate characteristics, i.e. conductance $G$ versus gate…