Related papers: Noisy defects in a doped Mott insulator
It has been reported that upon doping a Mott insulator, there can be a crossover to a pseudogaped metallic phase followed by a first-order transition to another thermodynamically stable metallic phase. We call this first-order metal-metal…
We study charge transport through a chain of quantum dots. The dots are fully coherent among each other and weakly coupled to metallic electrodes via the dots at the interface, thus modelling a molecular wire. If the non-local Coulomb…
We study transient dynamics of hole carriers injected at a certain time into a Mott insulator with antiferromagnetic long range order. This is termed ``dynamical hole doping" as contrast with chemical hole doping. Theoretical framework for…
We investigate the effect of Na intercalation in the layered Mott insulator TiOCl within the framework of density functional theory. We show that the system remains always insulating for all studied Na concentrations, and the evolution of…
We investigate the properties of the metallic state obtained by photo-doping carriers into a Mott insulator. In a strongly interacting system, these carriers have a long life-time, so that they can dissipate their kinetic energy to a phonon…
We argue that aspects of the anomalous, low temperature, spin and charge dynamics of the high temperature superconductors can be understood by studying the corresponding physics of undoped Mott insulators. Such insulators display a quantum…
The shot noise of the current through a single electron transistor (SET), coupled capacitively with an electronic box, is calculated, using the master equation approach. We show that the noise may be sub-Poissonian or strongly…
Cold atoms confined in periodic potentials are remarkably versatile quantum systems for implementing simple models prevalent in condensed matter theory. In the current experiment, we realize the 2D Bose-Hubbard model by loading a…
Doping stoichiometric SiNx layers (x=[N]/[Si]=1.33) with Si atoms by ultra-low energy ion implantation (ULE-II) and annealing them at different temperatures can significantly impact the switching characteristics. Electrical characterization…
Amorphous metal oxide thin-film transistors (TFT) are fabricated using InOx-based semiconductors doped with TiO2, WO3 or SiO2. Although density of dopant is low in the film, change in the electrical properties showed strong dependence on…
We use computational screening to systematically investigate the use of transition metal doped carbon nanotubes for chemical gas sensing. For a set of relevant target molecules (CO, NH3, H2S) and the main components of air (N2, O2, H2O), we…
This paper presents numerical studies of the single hole tt't''J model that address the interplay between the kinetic energy of itinerant electrons and the exchange energy of local moments as of interest to doped Mott insulators. Due to…
We construct the low energy theory of a doped Mott insulator, such as the high-temperature superconductors, by explicitly integrating over the degrees of freedom far away from the chemical potential. For either hole or electron doping, a…
Unravelling the nature of doping-induced transition between a Mott insulator and a weakly correlated metal is crucial to understanding novel emergent phases in strongly correlated materials. For this purpose, we study the evolution of…
Electric double layer transistor configurations have been employed to electrostatically dope single crystals of insulating SrTiO_{3}. Here we report on the results of such doping over broad ranges of temperature and carrier concentration…
Semiconductors' sensitivity to electrostatic gating and doping accounts for their widespread use in information communication and new energy technologies. It is demonstrated quantitatively and with no adjustable parameters that the presence…
We carry out a self-consistent analytical theory of unipolar current and noise properties of metal-semiconductor-metal structures made of highly resistive semiconductors in the presence of an applied bias of arbitrary strength. By including…
The bilayer structure of recently discovered high-temperature superconducting nickelates La$_3$Ni$_2$O$_7$ provides a new platform for investigating correlation and superconductivity. Starting from a bilayer Hubbard model, we show that…
Doping of semiconductors by impurity atoms enabled their widespread technological application in micro and opto-electronics. For colloidal semiconductor nanocrystals, an emerging family of materials where size, composition and shape-control…
Mott insulators provide stable quantum states and long coherence times to due to small number fluctuations, making them good candidates for quantum memory and atomic circuits. We propose a proof-of-principle for a 1D Mott switch using an…