Related papers: Noisy defects in a doped Mott insulator
We report on spectroscopy of a single dopant atom in silicon by resonant tunneling between source and drain of a gated nanowire etched from silicon on insulator. The electronic states of this dopant isolated in the channel appear as…
While the phase diagrams of the one- and multi-orbital Hubbard model have been well studied, the physics of real Mott insulators is often much richer, material dependent, and poorly understood. In the prototype Mott insulator…
Many emergent phenomena appear in doped Mott insulators near the insulator-to-metal transition. In high-temperature cuprate superconductors, superconductivity arises when antiferromagnetic (AFM) order is gradually suppressed by carrier…
Single atom manipulation within doped correlated electron systems would be highly beneficial to disentangle the influence of dopants, structural defects and crystallographic characteristics on their local electronic states. Unfortunately,…
We show that lightly doped holes will be self-trapped in an antiferromagnetic spin background at low-temperatures, resulting in a spontaneous translational symmetry breaking. The underlying Mott physics is responsible for such novel…
We present exactly solvable examples that topological Mott insulators can emerge from topologically trivial states due to strong interactions between atoms for atomic mixtures trapped in one-dimensional optical superlattice systems. The…
Realizing an excitonic insulator phase from narrow-gap semiconductors remains challenging, as unambiguous experimental signatures are difficult to establish. Ta$_2$NiSe$_5$ has been widely regarded as a leading candidate, yet the nature of…
Metal-insulator transitions in clean, crystalline solids can be driven by two distinct mechanisms. In a conventional insulator, the charge carrier concentration vanishes, when an energy gap separates filled and unfilled electronic states.…
Successive quantum transitions in an intermediate regime are shown to exist between the superfluid and Mott insulating states for interacting bosonic atoms in one dimension with a trapping potential. These transitions, which are caused by…
Doping a two-dimensional semiconductor with magnetic atoms is a possible route to induce magnetism in the material. We report on the atomic structure and electronic properties of monolayer WSe$_2$ intentionally doped with vanadium atoms by…
The parent compounds of the copper oxide high-Tc superconductors are unusual insulators. Superconductivity arises when they are properly doped away from stoichiometry1. In Bi2Sr2CaCu2O8+x, superconductivity results from doping with excess…
We perform precision measurements on a Mott-insulator quantum state of ultracold atoms with tunable interactions. We probe the dependence of the superfluid-to-Mott-insulator transition on the interaction strength and explore the limits of…
Based on recent experiments, we describe the Mott insulating, but undimerized state of $TiOCl$ using the local-density approximation combined with multi-orbital dynamical mean field theory (LDA+DMFT) for this $3d^{1}$ system.Good agreement…
One path to high-temperature cuprate superconductors is doping a Mott insulator. In this paper, we study this system from the view point of higher-form symmetries. On the introduction of slave bosons, the $t-J$ model at a finite hole doping…
We introduce a new technique to probe the properties of an interacting cold atomic gas that can be viewed as a dynamical compressibility measurement. We apply this technique to the study of the superfluid to Mott insulator quantum phase…
There has been extensive activity exploring the doping of semiconducting two-dimensional (2D) transition metal dichalcogenides in order to tune their electronic and magnetic properties. The outcome of doping depends on various factors,…
We have compared the shot-noise properties at T = 4.2 K of a double-barrier resonant-tunneling diode and a superlattice tunnel diode, both of which exhibit negative differential-conductance (NDC) in their current-voltage characteristics.…
Having access to the chemical environment at the atomic level of a dopant in a nanostructure is crucial for the understanding of its properties. We have performed atomically-resolved electron energy-loss spectroscopy to detect individual…
We investigate the evolution of the Mott insulators in the triangular lattice Hubbard Model, as a function of hole doping $\delta$ in both the strong and intermediate coupling limits. Using the advanced density matrix renormalization group…
We study the prerequisites for realizing superconductivity in doped triangular-lattice Mott insulators by considering three distinct parent spin backgrounds, i.e., $120^{\circ}$ antiferromagnets, quantum spin liquid, and stripy…