Related papers: State-of-the-Art Flash Chips for Dosimetry Applica…
The increasing interest in FLASH-RT has lead to the conversion of linear accelerators to enable ultra-high dose rate (UHDR) beams for preclinical research. Dosimetry hereof remains challenging with several crucial aspects missing. This work…
Graphene holds a great promise for a number of diverse future applications, in particular related to its easily tunable doping and Fermi level by electrostatic gating. However, as of today, most implementations rely on electrical doping via…
Mass characterisation of emerging memory devices is an essential step in modelling their behaviour for integration within a standard design flow for existing integrated circuit designers. This work develops a novel characterisation platform…
FLASH Radiotherapy (RT) is a potentially new cancer radiotherapy technique where an entire therapeutic dose is delivered in about 0.1 s and at ~1000 times higher dose rate than in conventional RT. For clinical trials to be conducted safely,…
Purpose: For more than a decade that plastic optical fiber based dosimeters have been developed for medical applications. The feasibility of dosimeters using optical fibers that are almost Cherenkov light free has been demonstrated in some…
We theoretically study the problem of detecting dipole radiation in an optical system of high numerical aperture in which the detector is sensitive to \textit{field amplitude}. In particular, we model the phase sensitive detector as a…
High precision timing, high rate calorimeters, and radiation resistance are becoming an important issue in particle physics especially in Energy and Intensity Frontiers. We discuss doped Zinc Oxide (ZnO:Ga or GZO; ZnO:X where X is Al, Cu or…
We have operated a Medipix2 CMOS readout chip, with amplifying, shaping and charge discriminating front-end electronics integrated on the pixel-level, as a highly segmented direct charge collecting anode in a three-stage gas electron…
Resistors from mobile phones, usually located near the human body, are considered as individual dosimeters of ionizing radiation in emergency situations. The resistors contain Al2O3, which is optically stimulated luminescence (OSL) material…
The progress of miniaturisation in integrated electronics has led to atomic and nanometre-sized dopant devices in silicon. Such structures can be fabricated routinely by hydrogen resist lithography, using various dopants such as phosphorous…
A high accuracy and high sensitivity system architecture is proposed for the read-out circuit of electrical impedance tomography system-on-chip. The switched ratiometric technique is applied in the proposed architecture. The proposed system…
Detectors at future high energy colliders will face enormous technical challenges. Disentangling the unprecedented numbers of particles expected in each event will require highly granular silicon pixel detectors with billions of readout…
This manuscript describes a radiation-hardened current-mode delta-sigma ADC fabricated in a standard 130 nm CMOS technology and qualified for total ionizing doses up to 100 Mrad. The operational signal range achieved with a 100 s…
Digital In-memory computing improves energy efficiency and throughput of a data-intensive process, which incur memory thrashing and, resulting multiple same memory accesses in a von Neumann architecture. Digital in-memory computing involves…
This paper presents a millimeter-scale CMOS 64$\times$64 single charged particle radiation detector system for external beam cancer radiotherapy. A 1$\times$1 $\mu m^2$ diode measures energy deposition by a single charged particle in the…
Photonics sensing has long been valued for its tolerance to harsh environments where traditional sensing technologies fail. As photonic components continue to evolve and find new applications, their tolerance to radiation is emerging as an…
This paper explores the prospect of CMOS devices to assay lead in drinking water, using calorimetry. Lead occurs together with traces of radioisotopes, e.g. Lead-210, producing $\gamma$-emissions with energies ranging from 10 keV to several…
Atomic frequency combs memories that coherently store optical signals are a key building block for optical quantum computers and quantum networks. Integrating such memories into compact and chip-scale devices is essential for scalable…
Stoichiometric SiNx layers (x = [N]/[Si] = 1.33) are doped with Si atoms by ultra-low energy ion implantation (ULE-II) and subsequently annealed at different temperatures in inert ambient conditions. Detailed material and memory cells…
Intrinsic charge trap capacitive non-volatile flash memories take a significant share of the semiconductor electronics market today. It is a challenge to create intrinsic traps in the dielectric layer without high temperature processing…