Related papers: Mid-infrared GeSn Electro-Absorption Optical Modul…
An integrated hybrid thin-film lithium niobate (TFLN) electro-optic Mach-Zehnder modulator (MZM) is shown at near-infrared wavelengths. The design uses TFLN bonded to planarized silicon nitride waveguide circuits, and does not require…
Silicon indirect bandgap fundamentally limits its ability to emit light, hindering the development of silicon-based light sources. Here, we explore a conceptually new solution to this long-standing challenge. We demonstrate ultrabroadband…
A few-micron thick structure that shows nearly 100% resonant polarized absorptance at a predefined midinfrared wavelength is designed and simulated. Like resonant-cavity enhanced photodetector structure, it contains a thin absorber enclosed…
Sn-containing Si and Ge alloys belong to an emerging family of semiconductors with the potential to impact group IV semiconductor devices. Indeed, the ability to independently engineer both lattice parameter and band gap holds the premise…
Black phosphorus has attracted interest as a material for use in optoelectronic devices due to many favorable properties such as a high carrier mobility, field-effect, and a direct bandgap that can range from 0.3 eV in its bulk crystalline…
Recent research and development in the mid-infrared (IR) wavelength range (2-20 um) for a variety of applications, such as trace gas monitoring, thermal imaging, and free space communications have shown tremendous and fascinating progress.…
Enabling perfect light absorption in ultrathin materials promises the development of exotic photonic devices. Here we demonstrate new strategies that can provide capabilities to rationally design ultrathin (thickness <…
Broadband active materials are pivotal for advancing emerging technologies spanning on-chip optical interconnects, artificial intelligence, quantum systems and precision metrology. Current semiconductor gain media face bandwidth…
Photonic miniaturization requires seamless integration of linear and nonlinear optical components to achieve passive and active functions simultaneously. Among the available material systems, silicon photonics holds immense promise for…
We demonstrate optomechanically-mediated electromagnetically-induced transparency and wavelength conversion in silicon nitride (Si3N4) microdisk resonators. Fabricated devices support whispering gallery optical modes with a quality factor…
Mid-infrared (mid-IR) frequency combs have broad applications in molecular spectroscopy and chemical/biological sensing. Recently developed microresonator-based combs in this wavelength regime could enable portable and robust devices using…
The mid-infrared (mid-IR) spectral region holds great promise for new laser-based sensing technologies, based on measuring strong mid-IR molecular absorption features. Practical applications have been limited to date, however, by current…
Mid-infrared photodetectors are susceptible to background noise since every object in the surroundings emits thermal radiation from different directions. To reduce this background noise and enhance signal-to-noise ratio of mid-infrared…
Electro-optic (E/O) modulators are crucial for optical communication but face a trade-off between modulation bandwidth and efficiency. A small footprint could reduce the capacitance and increase the bandwidth, however, this usually results…
GeSn alloys are metastable semiconductors that have been proposed as building blocks for silicon-integrated short-wave and mid-wave infrared photonic and sensing platforms. Exploiting these semiconductors requires, however, the control of…
We present the intrinsic optical properties over a broad spectral range of TiN thin films deposited on a Si/SiO$_2$ substrate. We analyze the measured reflectivity spectra of the film-substrate multilayer structure within a well-establish…
Photonic integrated circuits that exploit nonlinear optics in order to generate and process signals all-optically have achieved performance far superior to that possible electronically - particularly with respect to speed. Although…
There is increased interest in the heterogeneous integration of various compound semiconductors with Si for a variety of electronic and photonic applications. This paper focuses on integrating GaAsSb (with absorption in the C-band at…
We present the design, fabrication, and optical characterization of ultra-compact mid-wave infrared photodetector pixels. Our design relies on a guided mode resonance structure to confine incident mid-infrared light to the 250 nm-thick…
Silicon is an extremely attractive material platform for integrated optics at telecommunications wavelengths, particularly for integration with CMOS circuits. Developing detectors and electrically pumped lasers at telecom wavelengths are…