Related papers: Mid-infrared GeSn Electro-Absorption Optical Modul…
The phonon-assisted interband optical absorption spectrum of silicon is calculated at the quasiparticle level entirely from first principles. We make use of the Wannier interpolation formalism to determine the quasiparticle energies, as…
Acousto-optic integration offers numerous applications including low-loss microwave signal processing, nonreciprocal light propagation, frequency comb generation, and broadband acousto-optic modulation. State-of-the-art acousto-optic…
Periodically poled thin-film lithium niobate (TFLN) waveguides have emerged as a leading platform for highly efficient frequency conversion in the near-infrared. However, the commonly used silica bottom-cladding results in high absorption…
GeSn-based avalanche photodiode (APD) operating in shortwave infrared (SWIR) wavelength was demonstrated in this work. A separate absorption and charge multiplication (SACM) structure was employed to take advantage of long wavelength…
Polycrystalline silicon core fibers (SCFs) fabricated via the molten core drawing (MCD) method are emerging as a flexible optoelectronic platform. Here, the optical transmission properties of MCD SCFs that have been tapered down to a few…
Designing broadband metamaterial perfect absorbers is challenging due to the intrinsically narrow bandwidth of surface plasmon resonances. Here, the paper reports an ultra-broadband metamaterial absorber by using space filling Gosper curve.…
Mid-infrared (MIR) spectroscopy is a powerful technique employed for a variety of applications, including gas sensing, industrial inspection, astronomy, surveillance, and imaging. Thin-film narrowband interference filters, targeted to…
Development of novel radiation-absorbent materials and devices for millimetre and submillimetre astronomy instruments is a research area of high interest, and with substantial engineering challenges. Alongside low-profile structure and…
The majority of silicon photonics is built on silicon-on-insulator (SOI) wafers while the majority of electronics, including CPUs and memory, are built on bulk silicon wafers, limiting broader acceptance of silicon photonics. This…
Metastable silicon phases have attracted extensive attention these years, due to their fundamentally distinct photoelectric properties compared to the conventional diamond cubic (I) counterpart. Certain metastable phases, prepared via…
We demonstrate third harmonic generation in plasmonic antennas made of highly doped germanium and designed to be resonant in the mid infrared. Owing to the near-field enhancement, the result is an ultrafast, sub-diffraction, coherent light…
Optical frequency combs represent a revolutionary technology for high precision spectroscopy due to their narrow linewidths and precise frequency spacing. Generation of such combs in the mid-infrared (IR) spectral region (2-20 um) is of…
The study proposes an ultra-thin back side illuminated (BSI) and top-illuminated, Ge on Si photodetector (PD), for 1 to 1.4 microns wavelength range. The Ge thickness of 350 nm allows us to achieve high-speed performance at >60 GHz, while…
Electro-optical modulators are essential components in optical communication systems. They encode an electrical waveform onto an optical carrier. However, their performance is often limited by inherent electro-optic processes and…
Heterogeneously-integrated electro-optic modulators (EOM) are demonstrated using the hybrid-mode concept, incorporating thin-film lithium niobate (LN) by bonding with silicon nitride (SiN) passive photonics. At wavelengths near 1550 nm,…
Intersubband optoelectronic devices rely on transitions between quantum-confined electron levels in semiconductor heterostructures, which enables infrared (IR) photodetection in the 1-30 $\mu$m wavelength window with picosecond response…
Electro-optic modulators transform electronic signals into the optical domain and are critical components in modern telecommunication networks, RF photonics, and emerging applications in quantum photonics and beam steering. All these…
Integrated photonic devices made of silicon nitride (SiN), which can be integrated with silicon-on-insulator and III-V platforms, are expected to drive the expansion of silicon photonics technology. However, the relatively low refractive…
Photonic integrated circuits currently use platform intrinsic thermo-optic and electro-optic effects to implement dynamic functions such as switching, modulation and other processing. Currently, there is a drive to implement field…
We present a compact on-chip resonator enhanced silicon-MSM photodetector in $850$ $nm$ wavelength band for communication and lab-on-chip bio-sensing applications. We report the highest responsivity of 0.81 A/W for a 5 $\mu m$ long device.…