Related papers: Mid-infrared GeSn Electro-Absorption Optical Modul…
The design and fabrication of a metal-dielectric-metal absorber that achieves strong absorption from the ultraviolet (UV) to the near-infrared (near-IR) spectrum are presented. The proposed nanostructure consists of a periodic titanium (Ti)…
Silicon's bandgap inherently restricts its photodetection to wavelengths below 1100 nm, necessitating the integration of costly III-V semiconductors for short-wave infrared applications. Hyperdoping silicon beyond the solid solubility limit…
While recent advances in reconfigurable photonics have provided new avenues for manipulating light on the subwavelength scale, on-demand control of infrared absorption remains elusive. Here, we experimentally demonstrate a plasmonic…
Waveguide-based interferometric circuits are widely employed in optical communications, sensing and computing applications. In particular, glass-based devices are appealing due to the transparency and bio-compatibility of this substrate, or…
The implementation of optomechanical devices in silicon-on-insulator (SOI), the canonical silicon photonics technology is seriously hampered by the strong phonon leakage into the silica under-cladding. This limitation has been partially…
Even though submicron silicon waveguides have been proposed for dense integration of photonic devices, to date the lightwave circuits on the market mainly rely on waveguides with micron-scale core dimensions. These larger waveguides feature…
Two-dimensional molybdenum disulfide (MoS$_2$) featuring atomically thin thickness and unique electronic structure with favorable bandgap has been widely recognized as an attractive new material for the development of the next generation of…
Active metasurfaces enable dynamic control of light for applications in beam steering, pixelated holography, and adaptive optics, but demonstrations of two-dimensional (2D) electrically addressable arrays have so far been limited. Here we…
Graphene opens up for novel optoelectronic applications thanks to its high carrier mobility, ultra-large absorption bandwidth, and extremely fast material response. In particular, the opportunity to control optoelectronic properties through…
Optical frequency-comb-based-high-resolution spectrometers offer enormous potential for spectroscopic applications. Although various implementations have been demonstrated, the lack of suitable mid-infrared comb sources has impeded…
In the last decade, remarkable advances in integrated photonic technologies have enabled table-top experiments and instrumentation to be scaled down to compact chips with significant reduction in size, weight, power consumption, and cost.…
We investigate advanced CMOS-compatible Graphene/Silicon active metasurfaces based on guided-mode resonance filters. The simulated results show a high extinction ratio (>25 dB), narrow linewidth (~1.5 nm @1550 nm), quality factor of Q~1000,…
Opto-mechanical systems have enabled wide-band optical frequency conversion and multi-channel all-optical radio frequency amplification. Realization of an on-chip silicon communication platform is limited by photodetectors needed to convert…
In this paper, a route to ultra-broadband absorption is suggested and demonstrated by a feasible design. The high absorption regime (absorption above 90%) for the suggested structure ranges from visible to mid-infrared (MIR), i.e. for the…
Epsilon-near-zero (ENZ) materials, defined by $ | Re({\epsilon}) | < 1$, enable unique light propagation characteristics, including confinement within sub-wavelength regions. To reduce losses in this regime, materials with both near-zero…
Polarization control is of fundamental importance for modern optical systems, and optical polarizers serve as critical components for enabling this functionality. Here, we experimentally demonstrate optical polarizers by integrating 2D…
Metamaterial-based absorbers have been extensively investigated in the terahertz (THz) range with ever increasing performances. In this paper, we propose an all-dielectric THz absorber based on doped silicon. The unit cell consists of a…
Group IV alloys of GeSn have gained significant attention for electronic and optoelectronic applications on a Si platform due to their compatibility with existing CMOS technology, tunable band structure, and potential for a direct bandgap…
The transparency of silicon in the infrared region enables the design of nano/microstructures for implementation in devices to harvest the infrared (IR) part of the solar spectrum. Herein we report a strategy that uses arrays of inverted…
Optical isolators, while commonplace in bulk- and fiber-optic systems, remain a key missing component in integrated photonic systems. Isolation using magneto-optic effects has been difficult to implement due to fabrication restraints,…