Related papers: Edgeless and Purely Gate-Defined Nanostructures in…
In this work, the effect of size and wetting layer on subband electronic envelop functions, eigenenergies, linear and nonlinear absorption coefficients and refractive indices of a dome-shaped InAs/GaAs quantum dot were investigated. In our…
We report the fabrication and characterization of gate-defined hole quantum dots in monolayer and bilayer WSe$_2$. The devices were operated with gates above and below the WSe$_2$ layer to accumulate a hole gas, which for some devices was…
What is the time-optimal way of realizing quantum operations? Here, we show how important instances of this problem can be related to the study of shortest paths on the surface of a sphere under a special metric. Specifically, we provide an…
Surfaces are at the frontier of every known solid. They provide versatile supports for functional nanostructures and mediate essential physicochemical processes. Being intimately related with 2D materials, interfaces and atomically thin…
In circuit-based quantum computing, the available gate set typically consists of single-qubit gates acting on each individual qubit and at least one entangling gate between pairs of qubits. In certain physical architectures, however, some…
We report on the optical properties of a newly developed site-controlled InGaAs Dots in GaAs barriers grown in pre-patterned pyramidal recesses by metalorganic vapour phase epitaxy. The inhomogeneous broadening of excitonic emission from an…
Quantum nanophotonics has become a new research frontier where quantum optics is combined with nanophotonics in order to enhance and control the interaction between strongly confined light and quantum emitters. Such progress provides a…
We report in this letter experimental results that confirm the two-dimensional nature of the electron systems in monolayer InN quantum wells embedded in GaN barriers. The electron density and mobility of the two-dimensional electron system…
We report the experimental realization of double quantum dots in single-walled carbon nanotubes. The device consists of a nanotube with source and drain contact, and three additional top-gate electrodes in between. We show that, by…
We observe a series of sharp resonant features in the tunnelling differential conductance of InAs quantum dots. We found that dissipative quantum tunnelling has a strong influence on the operation of nano-devices. Because of such tunnelling…
Molecular states in a SINGLE PAIR of strongly coupled self-assembled InAs quantum dots are investigated using a sub-micron sized single electron transistor containing just a few pairs of coupled InAs dots embedded in a GaAs matrix. We…
We have investigated the band-gap pressure coefficients of self-assembled InAs/GaAs quantum dots by calculating 17 systems with different quantum dot shape, size, and alloying profile using atomistic empirical pseudopotential method within…
We investigated the gate control of a two-dimensional electron gas (2DEG) confined to InSb quantum wells with an Al2O3 gate dielectric formed by atomic layer deposition on a surface layer of Al0.1In0.9Sb or InSb. The wider bandgap of…
We report transport mobility measurements for clean, two-dimensional (2D) electron systems confined to GaAs quantum wells (QWs), grown via molecular beam epitaxy, in two families of structures, a standard, symmetrically-doped GaAs set of…
We investigate theoretically the entanglement of two quantum dots (QDs) coupled to metallic nanowaveguide in the presence of the flip-flop interaction with the analytical solutions of eigenvalue equations of the coupled system. High…
Epitaxial InAs/GaAs Quantum Dots (QDs) are widely used as highly efficient and pure sources of single photons and entangled photon-pairs, however reliable wafer-scale growth techniques have proved elusive. Growth of two-dimensional Quantum…
We investigated the quantum gates of coupled quantum dots, theoretically, when charging effects can be observed. We have shown that the charged states in the qubits can be observed by the channel current of the MOSFET structure.
We study theoretically a quantum dot in the quantum Hall regime that is strongly coupled to a single lead via a point contact. We find that even when the transmission through the point contact is perfect, important features of the Coulomb…
We describe in detail a set of ideas for implementing qubits, quantum gates and quantum gate networks in a semiconductor heterostructure device. Our proposal is based on an extension of the technology used for surface acoustic wave (SAW)…
We demonstrate an electrostatic trap for indirect excitons in a field-effect structure based on coupled GaAs quantum wells. Within the plane of a double quantum well indirect excitons are trapped at the perimeter of a SiO2 area sandwiched…