Related papers: Modeling Transient Negative Capacitance in Steep-S…
Conventionally, dc fields are used for switching dipole orientations in ferroelectrics. Such fields tilt the potential surface experienced by domain walls and thereby lower activation energies for their movement: escape from tilted…
The interplay between ferroelectricity, magnetism, and superconductivity provides a rich platform for discovering novel quantum phenomena. Here, we develop an effective theory and propose a heterostructure composed of an antiferromagnetic…
Smart electronic circuits that support neuromorphic computing on the hardware level necessitate materials with memristive, memcapacitive, and neuromorphic-like functional properties; in short, the electronic response must depend on the…
Ferroelectric field-effect transistors (Fe-FETs) with ferroelectric hafnium oxide (FE HfO2) as gate insulator are being extensively explored as a promising device candidate for three-dimensional (3D) NAND memory application. FE HfO2…
This paper analyzes the design space stability of negative capacitance double gate junctionless FETs (NCDG JLFET). Using analytical expressions derived from a charge-based model, we predict instability condition, hysteresis voltage, and…
We investigate the nonlinear response of the domain wall velocity ($v$) to an external electric field ($E_{ext}$) in ferroelectric Si-doped HfO$_{2}$ thin film capacitors using piezoresponse force microscopy (PFM) and switching current…
The superconducting transition temperature, $T_{\rm{c}}$, of FeSe can be significantly enhanced several-fold by applying pressure, electron doping, intercalating spacing layer, and reducing dimensionality. Various ordered electronic phases,…
While negative capacitance has been demonstrated in ferroelectric-dielectric heterostructures in the form of capacitance enhancement, all experimental evidence, to date, suggests the existence of domains therein. Here, we address the…
In this paper, two dimensional modulation of the potential in sexithiophene (T6) / N,N-bis(n-octyl)-dicyanoperylenediimide (PDI-8CN2) heterojunction field effect transistors due to the specific microstructure at the interface is used to…
We have addressed the microscopic transport mechanism at the switching or on-off transition in transition metal dichalcogenide (TMDC) field-effect transistors (FET), which has been a controversial topic in TMDC electronics, especially at…
Negative differential conductance (NDC) is expected to be an essential property to realize fast switching in future electronic devices. We here present a thorough analysis on electron transportability of a simple atomic-scale model…
The emergence of high transition temperature ($T_c$) superconductivity in bulk FeSe under pressure is associated with the tuning of nematicity and magnetism. However, sorting out the relative contributions from magnetic and nematic…
Ferroelectric field-effect transistors (FE-FETs) consisting of tunable dielectric layers are utilized to investigate interfacial transport processes. Large changes in the dielectric constant as a function of temperature are observed in…
Ferroelectric field-effect transistors integrated on 2D semiconducting platforms are extremely relevant for low power electronics. Here, we propose and demonstrate a novel phase-change ferroelectric field effect transistor (PCFE-FET) for…
Vertical tunneling field-effect-transistor (FET) based on graphene heterojunctions with layers of hBN is simulated by self-consistent quantum transport simulations. It is found that the asymmetric p-type and n-type conduction is due to work…
Resistivity and thermoelectric power (TEP) measurements on CeFe$_2$ and two of its pseudo-binaries Ce(Fe, 5% Ir)$_2$ and Ce(Fe, 7% Ru)$_2$ between 78K and 275K are reported. The resistivity data are analysed in terms of contributions from…
Superconductivity (SC) occurring at low densities of mobile electrons is still a mystery since the standard theories do not apply in this regime. We address this problem by using a microscopic model for ferroelectric (FE) modes, which…
The Boltzmann distribution of electrons poses a fundamental barrier to lowering energy dissipation in conventional electronics, often termed as Boltzmann Tyranny. Negative capacitance in ferroelectric materials, which stems from the stored…
Gate tunable p-type multilayer tin mono-sulfide (SnS) field-effect transistor (FET) devices with SnS thickness between 50 and 100 nm were fabricated and studied to understand their performances. The devices showed anisotropic inplane…
While scandium-doped aluminum nitride (AlScN) exhibits robust ferroelectricity and excellent thermal stability, its utility is limited by an exceptionally high coercive field ($E_c$) for polarization switching. Unraveling the atomistic…