Related papers: Modeling Transient Negative Capacitance in Steep-S…

The exact mechanism responsible for the tenfold enhancement of superconducting transition temperature (Tc) in a monolayer iron selenide (FeSe) on SrTiO3(STO) substrate over that of bulk FeSe, is an open issue. We present here a coordinated…

Transition metal dichalcogenides (TMDCs) usually exhibit layered polytypic structures due to the weak interlayer coupling. 2H-NbSe2 is one of the most widely studied in the pristine TMDC family due to its high superconducting transition…

Funtionalized pentacene, 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene), field-effect transistors(FET's) were made by thermal evaporation or solution deposition method and the mobility was measured as a function of temperature…

Superconducting transition temperature (Tc) and FMR were measured in heterostructure OC/V/Fe, were OC=Fe/Cr/Fe. Giant oscillations of Tc depending on a Cr-thickness were detected. Probable reasons of Tc-oscillation are discussed - periodic…

The ferromagnetic (FM) transition temperature (Tc) of a two-band Double-Exchange (DE) model for colossal magnetoresistance (CMR) materials is studied using dynamical mean-field theory (DMFT), in wide ranges of coupling constants, hopping…

Process-related and stress-induced changes in threshold voltage are major variability concerns in ultra-scaled CMOS transistors. The device designers consider this variability as an irreducible part of the design problem and use different…

The electrical resistivity, crystalline structure and electronic properties calculated from the experimentally measured atomic positions of the compound SmFeAsO$_{0.81}$F$_{0.19}$ have been studied up to pressures ~20GPa. The correlation…

During the last half-decade, a new class of ferroic-fluid, ferroelectric nematic liquid crystals (NFLCs), creates a noise owing to its exceptional properties such as a colossal polarization, high electro-optic activity plus high fluidity.…

Transients of a grid-synchronized voltage source converter (VSC) are closely related to over- currents and voltages occurred under large disturbances (e.g. a grid fault). Previous analysis in evaluating these transients usually neglect the…

Novel devices such as tunneling field-effect transistors (FETs) and ferroelectric FETs have been demonstrated to break the subthreshold swing (SS) limit with sub-60 mV/decade switching for further low voltage/low power applications. In this…

We examine the effects of strain and cation substitution on the superconducting phase of polar semiconductors near a ferroelectric quantum phase transition with a model that combines a strong coupling theory of superconductors with a…

Ferroelectric nanostructures can be formed by local switching of domains using techniques such as piezo-force microscopy (PFM). Understanding lateral size effects is important to determine the minimum feature size for writing ferroelectric…

We present a systematic study of the magnetic domain wall induced modulation of superconducting transition temperature (Tc) in Nb/Ni bilayer stripes. By varying the thickness of the Ni layer from 20 nm to 100 nm we have been able to measure…

Ta$_{2}$S$_{2}$C compound undergoes superconducting transitions at $T_{cl} = 3.60 \pm 0.02$ K and $T_{cu} = 9.0 \pm 0.2$ K. The nature of successive superconducting transitions has been studied from electrical resistivity, linear and…

The non-resonant THz response of CMOS FET has been analyzed based on static non-linearities of the transistor channel. Under the quasi-static limit, the second order non-linearities dominantly determine the DC current in the channel…

We study the surface conductivity of a field-effect transistor (FET) made of periodic array of spherical semiconductor nanocrystals (NCs). We show that electrons introduced to NCs by the gate voltage occupy one or two layers of the array.…

We report record performance for black phosphorus p-MOSFETs. The devices have locally patterned back gates and 20-nm-thick HfO2 gate dielectrics. Devices with effective gate length, Leff = 1.0 um display extrinsic transconductance, gm, of…

The effect of polarization rotation on the performance of metal oxide semiconductor field-effect transistors was investigated with a Landau-Ginzburg-Devonshire theory based model. In this analytical model, depolarization field, polarization…

We report field and temperature dependent measurements of the thermoelectric power (TEP) across the pseudo-metamagnetic transition (MMT) in CeRu$_2$Si$_2$. We applied the thermoelectric gradient parallel and perpendicular to the field along…

In all-oxide ferroelectric (FE) - superconductor (S) bilayers, due to the low carrier concentration of oxides compared to transition metals, the FE interfacial polarization charges induce an accumulation (or depletion) of charge carriers in…