Related papers: Simultaneous Switching of Multiple GaN Transistors…
Using recently available GaN FETs, a 600 Volt three-stage, multi-FET switch has been developed having 2 nanosecond rise time driving a 200 Ohm load with the potential of approaching 30 MHz average switching rates. Possible applications…
In this work, we report the use of commercial Gallium Nitride (GaN) power electronics to precisely switch complex distributed loads, such as electron lenses and deflectors, without impedance matching. Depending on the chosen GaN field…
A photonic transistor that can switch or amplify an optical signal with a single gate photon requires strong non-linear interaction at the single-photon level. Circuit quantum electrodynamics provides great flexibility to generate such an…
This paper presents a design and implementation of a high-power Gallium Nitride (GaN)-based multilevel Hbridge inverter to excite wireless charging coils for the wireless power transfer of electric vehicles (EVs). Compared to the…
The development of integrated photonic circuits utilizing gallium phosphide requires a robust, scalable process for fabrication of GaP-on-insulator devices. Here we present the first GaP photonic devices on SiO$_2$. The process exploits…
Optical pulse shaping stands as a formidable technique in ultrafast optics, radio-frequency photonics, and quantum communications. While existing systems rely on bulk optics or integrated platforms with planar waveguide sections for spatial…
Harnessing the frequency dimension in integrated photonics offers key advantages in terms of scalability, noise resilience, parallelization and compatibility with telecom multiplexing techniques. Integrated ring resonators have been used to…
Silicon photonics promises to address the challenges for next-generation short-reach optical interconnects. Growing bandwidth demand in hyper-scale data centers and high-performance computing motivates the development of faster and…
Dissipative Kerr solitons (DKSs) have been generated via injection locking of chipscale microresonators to continuous-wave (CW) III-V lasers. This advance has enabled fully integrated hybrid microcomb systems that operate in turnkey mode…
The Fermilab Side-Coupled Linac accelerates H-beam from 116 MeV to 400 MeV through seven 805 MHz modules. Twelve wire scanners are present in the Side Coupled Linac and four are present in the transfer line between the Linac and the Booster…
The aim of this work is to design and implement an embedded system capable to characterize some relevant figures of merit of Gallium Nitride and Silicon Carbide transistors in a wide range of frequencies. In particular, the designed system…
We report on the generation of a train of ~ 2 ps, 10 um laser pulses via multiple four-wave mixing and compression of an infrared laser beat-wave propagating in the negative group velocity dispersion region of bulk GaAs and a combination of…
Photoresponse of Au nanoparticle functionalized semiconducting GaN (Au-GaN) nanowires is reported for an optical switching using 532 excitation. Wide band gap GaN nanowires are grown by catalyst assisted chemical vapour deposition technique…
We present a measurement of phonon propagation in a silicon wafer utilizing an array of frequency-multiplexed superconducting resonators coupled to a single transmission line. The electronic readout permits fully synchronous array sampling…
Stochastic switching between the two bistable states of a strongly driven mechanical resonator enables detection of weak signals based on probability distributions, in a manner that mimics biological systems. However, conventional silicon…
Achieving monolithic integration of passive acoustic wave devices, in particular RF filters, with active devices such as RF amplifiers and switches, is the optimal solution to meet the challenging communication requirements of mobile…
We demonstrate strong coupling of gigahertz-frequency nanomechanical resonators to a frequency-tunable superconducting microwave resonator via a galvanically bonded flip-chip method. By tuning the microwave resonator with an external…
Thin-film gallium nitride (GaN) as a proven piezoelectric material is a promising platform for the phononic integrated circuits, which hold great potential for scalable information processing processors. Here, an unsuspended traveling…
Silicon photonics has evolved from lab research to commercial products in the past decade as it plays an increasingly crucial role in data communication for next-generation data centers and high performance computing1. Recently,…
We describe an electro-optical switch based on a commercial electro-optic modulator (modified for high-speed operation) and a 340V pulser having a rise time of 2.2ns (at 250V). It can produce arbitrary pulse patterns with an average…