Related papers: Simultaneous Switching of Multiple GaN Transistors…
In this paper we report on the development of a fast high-voltage switch, which is based on two enhancement mode N-channel Silicon Carbide Metal Oxide Semiconductor Field-Effect Transistors in push-pull configuration. The switch is capable…
Photon pair generation in silicon photonic integrated circuits relies on four wave mixing via the third order nonlinearity. Due to phase matching requirements and group velocity dispersion, this method has typically required TE polarized…
While vertical GaN-on-silicon architectures promise a transformative leap in cost-effective power electronics and high-resolution micro-LEDs, their deployment remains bottlenecked by the high electrical resistance of conventional epitaxial…
The nanoscale resistive switching characteristics of gallium phosphide (GaP) thin films directly grown on Si are investigated as a function of incident light. Firstly, as-grown GaP films show a high RON/ROFF (~10^4), shown to arise from the…
We present a theoretical analysis supported by comprehensive numerical simulations of quasi phase-matched four-wave mixing (FWM) of ultrashort optical pulses that propagate in weakly width-modulated silicon photonic nanowire gratings. Our…
Silicon photonics enables wafer-scale integration of optical functionalities on chip. A silicon-based laser frequency combs could significantly expand the applications of silicon photonics, by providing integrated sources of mutually…
Here we report the development of high-efficiency microscale GaAs laser power converters, and their successful transfer printing onto silicon substrates, presenting a unique, high power, low-cost and integrated power supply solution for…
Silicon nitride (SiN) photonics platform has attributes of ultra-low linear and nonlinear propagation losses and CMOS-compatible fabrication process, promising large-scale multifunctional photonic circuits. However, the centrosymmetric…
Nonlinear interactions between ultrashort optical waveforms and solids can be used to induce and steer electric current on a femtosecond (fs) timescale, holding promise for electronic signal processing at PHz frequencies [Nature 493, 70…
We report the observation of strong coupling between the exchange-coupled spins in gallium-doped yttrium iron garnet and a superconducting coplanar microwave resonator made from Nb. The measured coupling rate of 450 MHz is proportional to…
Defect centers in GaN emerge as bright sources of single-photons which recently have been demonstrated to optically interface a localized spin. However, the structure and composition of these defects as well as their efficient excitation…
Silicon photonic integrated circuits offer significant improvements in processing bandwidth, power efficiency, and low latency, addressing the needs of future microwave communication systems. Several successful applications have been…
In this paper, we investigated a gate driver using a GaN HEMT push-pull configuration for the high-frequency hard switching of a SiC power MOSFET. Low on-resistance and low input capacitance of GaN HEMTs are suitable for a high-frequency…
The Proton Improvement Plan phase II (PIP-II) project currently under construction at FNAL will replace the existing 400 MeV normal conducting linac with a new 800 MeV superconducting linac. The beam power in the downstream rapid-cycling…
A CW-compatible, pulsed H- superconducting linac "PIP-II" is being planned to upgrade Fermilab's injection complex. To validate the front-end concept, a test accelerator (The PIP-II Injector Test, formerly known as "PXIE") is under…
With present-day detectors in high energy physics one often faces fast analog pulses of a few nanoseconds length which cover large dynamic ranges. In many experiments both amplitude and timing information have to be measured with high…
PIP-II is an 800 MeV superconducting RF linear accelerator under development at Fermilab. As the new first stage in our accelerator chain, it will deliver high-power beam to multiple experiments simultaneously and thus drive Fermilab's…
Modern microelectronic systems require long term operational stability, necessitating precise reliability models to predict device lifecycles and identify governing failure mechanisms. This is particularly critical for high power GaN…
We propose a procedure for transferring the state a microwave qubit via a transmission line from one resonator to another resonator, with a theoretical efficiency arbitrarily close to 100%. The emission and capture of the microwave energy…
We have developed an avalanche transistor-based pulse generator for driving the photocathode of an image intensifier, which comprises a mainly capacitive load on the order of 100 pF. The circuit produces flat-top pulses with rise time of 2…