Related papers: High mobility InAs 2DEGs on GaSb substrates: a pla…
We report magnetotransport measurements of a gated InSb quantum well (QW) with high quality Al2O3 dielectrics (40 nm thick) grown by atomic layer deposition. The magnetoresistance data demonstrate a parallel conduction channel in the sample…
We present an overview of the measured transport properties of the two dimensional electron fluids in high mobility semiconductor devices with low electron densities, and of some of the theories that have been proposed to account for them.…
PtSe2 is attracting considerable attention as a high mobility two-dimensional material with envisionned applications in microelectronics, photodetection and spintronics. The growth of high quality PtSe2 on insulating substrates with…
We investigate the zero and finite temperature transport properties of a quasi-two-dimensional electron gas in a GaAs/InGaAs/GaAs quantum well under a magnetic field, taking into account many-body effects via a local-field correction. We…
A theory of scattering by charged dislocation lines in a two-dimensional electron gas (2DEG) is developed. The theory is directed towards understanding transport in AlGaN/GaN high-electron-mobility transistors (HEMT), which have a large…
We investigated the spin coherence of high-mobility two-dimensional electron gases confined in multilayer GaAs quantum wells. The dynamics of the spin polarization was optically studied using pump-probe techniques: time-resolved Kerr…
Employing state-of-the-art molecular beam epitaxy techniques to grow thin, modulation-doped AlAs quantum wells, we have achieved a low temperature mobility of 5.5 m$^2$/Vs with out-of-plane occupation, an order of magnitude improvement over…
We report on optically induced transport phenomena in freely suspended channels containing a two-dimensional electron gas (2DEG). The submicron devices are fabricated in AlGaAs/GaAs heterostructures by etching techniques. The photoresponse…
Three different elements, Silicon, Selenium, and Tellurium, are ion-implanted in Gallium arsenide to form a conducting layer that serves as a back-gate to a molecular beam epitaxy (MBE) overgrown two-dimensional electron gas (2DEG). While…
We report results of investigations of structural and transport properties of GaAs/Ga(1-x)In(x)As/GaAs quantum wells (QWs) having a 0.5-1.8 ML thick Mn layer, separated from the QW by a 3 nm thick spacer. The structure has hole mobility of…
The discovery of two-dimensional electron gases (2DEGs) in SrTiO3-based heterostructures provides new opportunities for nanoelectronics. Herein, we create a new type of oxide 2DEG by the epitaxial-strain-induced polarization at an otherwise…
Suppressing electron scattering is essential to achieve high-mobility two-dimensional electron systems (2DESs) that are clean enough to probe exotic interaction-driven phenomena. In heterostructures it is common practice to utilize…
The prospect of achieving fault-tolerant quantum computing with semiconductor spin qubits in Si/SiGe heterostructures relies on the integration of a large number of identical devices, a feat achievable through a scalable (Bi)CMOS…
We present time-resolved Kerr rotation measurements of electron spin dynamics in a GaAs/AlGaAs heterojunction system that contains a high-mobility two-dimensional electron gas (2DEG). Due to the complex layer structure of this material the…
We study the temperature flow of conductivities in a gated GaAs two-dimensional electron gas (2DEG) containing self-assembled InAs dots and compare the results with recent theoretical predictions. By changing the gate voltage, we are able…
We have fabricated a sub-micron-sized structure consisting of an InAs-based 2DEG, two narrow Nb leads and a gate, where the indirect ballistic transport between the non-oppositely superconducting contacts can be controlled by the voltage…
Ultra-clean low-dimensional interacting charge carrier systems are the basis to explore correlated states and phases. We report the observation of very narrow collective intersubband excitations (ISBE) of 2D electron systems (2DESs) with…
Two-dimensional electron gasses (2DEG) in InAs quantum wells proximitized by aluminum are promising platforms for topological qubits based on Majorana zero modes. However, there are still substantial uncertainties associated with the nature…
We have measured the surface acoustic wave velocity shift in a GaAs/AlGaAs heterostructure containing a two-dimensional electron system (2DES) in a low-density regime ($<$ $10^{10}$ cm$^{-2}$) at zero magnetic field. The interaction of the…
We report electronic transport measurements on two-dimensional electron gases in a Ga[Al]As heterostructure with an embedded layer of InAs self-assembled quantum dots. At high InAs dot densities, pronounced Altshuler-Aronov-Spivak…