Optically induced transport properties of freely suspended semiconductor submicron channels

C. Rossler; K. -D. Hof; S. Manus; S. Ludwig; J. P. Kotthaus; J. Simon; A. W. Holleitner; D. Schuh; W. Wegscheider

doi:10.1063/1.2970035

Optically induced transport properties of freely suspended semiconductor submicron channels

Mesoscale and Nanoscale Physics 2011-07-25 v1 Other Condensed Matter

Authors: C. Rossler , K. -D. Hof , S. Manus , S. Ludwig , J. P. Kotthaus , J. Simon , A. W. Holleitner , D. Schuh , W. Wegscheider

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Abstract

We report on optically induced transport phenomena in freely suspended channels containing a two-dimensional electron gas (2DEG). The submicron devices are fabricated in AlGaAs/GaAs heterostructures by etching techniques. The photoresponse of the devices can be understood in terms of the combination of photogating and a photodoping effect. The hereby enhanced electronic conductance exhibits a time constant in the range of one to ten milliseconds.

Keywords

optically induced transport freely suspended channels two-dimensional electron gas 2DEG AlGaAs/GaAs heterostructures photogating photodoping electronic conductance

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@article{arxiv.0805.2230,
  title  = {Optically induced transport properties of freely suspended semiconductor submicron channels},
  author = {C. Rossler and K. -D. Hof and S. Manus and S. Ludwig and J. P. Kotthaus and J. Simon and A. W. Holleitner and D. Schuh and W. Wegscheider},
  journal= {arXiv preprint arXiv:0805.2230},
  year   = {2011}
}

Optically induced transport properties of freely suspended semiconductor submicron channels

Abstract

Keywords

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