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Room-temperature (RT) conductivity of most candidates for solid electrolytes of miniaturized lithium-ion batteries is still 1-2 orders of magnitude below commercial requirements, therefore several approaches are being pursued aiming the…

Materials Science · Physics 2016-03-17 R. Mouta , C. W. A. Paschoal

Electric fields can transform materials with respect to their structure and properties, enabling various applications ranging from batteries to spintronics. Recently electrolytic gating, which can generate large electric fields and…

Electrostatic control of the metal-insulator transition (MIT) in an oxide semiconductor could potentially impact the emerging field of oxide electronics. Vanadium dioxide is of particular interest due to the fact that the MIT happens in the…

By using an electrochemical gating technique with a new combination of polymer and electrolyte, we were able to inject surface charge densities n_2D as high as 3.5 \times 10^15 e/cm^2 in gold films and to observe large relative variations…

Mesoscale and Nanoscale Physics · Physics 2013-01-17 D. Daghero , F. Paolucci , A. Sola , M. Tortello , G. A. Ummarino , R. S. Gonnelli , Jijeesh R. Nair , C. Gerbaldi

Fast lithium transport across the solid-state electrolyte (SSE)/lithium metal anode interface is critical for high-performance all-solid-state batteries. Uncovering the complex lithium dynamics governed by diverse local environments in the…

Materials Science · Physics 2026-03-04 Qiye Guan , Yongqing Cai

We report the realization of field-effect transistors (FETs) made with chemically- synthesized layered two dimensional (2D) crystal semiconductor WS2. The 2D Schottky-barrier FETs demonstrate ambipolar behavior and a high (~105x) on/off…

We have observed thermal gating, i.e. electrostatic gating induced by hot electrons. The effect occurs in a device consisting of two capacitively coupled quantum dots. The double dot system is coupled to a hot electron reservoir on one side…

We report on resistive switching of memristive electrochemical metallization devices using 3D kinetic Monte Carlo simulations describing the transport of ions through a solid state electrolyte of an Ag/TiO$_{\text{x}}$/Pt thin layer system.…

Materials Science · Physics 2017-06-06 Sven Dirkmann , Thomas Mussenbrock

Graphene field-effect transistors are widely used for development of biosensors. However, certain fundamental questions about details of their functioning are not fully understood yet. One of these questions is the presence of gate…

Mesoscale and Nanoscale Physics · Physics 2022-06-14 A. Svetlova , D. Kireev , D. Mayer , A. Offenhaeusser

The performance and scalability of two-dimensional (2D) field-effect transistors (FETs) are strongly influenced by geometry-defined electrostatics. In most 2D FET studies, the gate overlaps with the source and drain electrodes, allowing the…

Mesoscale and Nanoscale Physics · Physics 2025-11-14 Victoria M. Ravel , Sarah R. Evans , Samantha K. Holmes , James L. Doherty , Md Sazzadur Rahman , Tania Roy , Aaron D. Franklin

We have experimentally demonstrated the effectiveness of beta-gallium oxide (beta-Ga2O3) ferroelectric fin field-effect transistors (Fe-FinFETs) for the first time. Atomic layer deposited (ALD) hafnium zirconium oxide (HZO) is used as the…

We report protonation in several compounds by an ionic-liquid-gating method, with optimized gating conditions. This leads to single superconducting phases for several compounds. Non-volatility of protons allow post-gating magnetization and…

A graphene field effect transistor, where the active area is made of monolayer large-area graphene, is simulated including a full 2D Poisson equation and a drift-diffusion model with mobilities deduced by a direct numerical solution of the…

Applied Physics · Physics 2021-09-01 Giovanni Nastasi , Vittorio Romano

Junctionless Nanowire Field-Effect Transistors (JNFETs), where the channel region is uniformly doped without the need for source-channel and drain-channel junctions or lateral doping abruptness, are considered an attractive alternative to…

Emerging Technologies · Computer Science 2014-04-02 Mostafizur Rahman , Pritish Narayanan , Csaba Andras Moritz

We report on the first realization of Nb-based \textit{all-metallic} gated Dayem nano-bridge field-effect transistors (Nb-FETs). These Josephson devices operate up to a temperature of $\sim 3$ K, and exhibit full suppression of the…

Mesoscale and Nanoscale Physics · Physics 2020-06-24 Giorgio De Simoni , Claudio Puglia , Francesco Giazotto

Solid mixed conductors with significant ionic as well as electronic conduction play a pivotal role for mass transfer and storage as required in battery electrodes. Single-phase materials with simultaneously high electronic and ionic…

Mesoscale and Nanoscale Physics · Physics 2017-09-11 M. Kühne , F. Paolucci , J. Popovic , P. M. Ostrovsky , J. Maier , J. H. Smet

Additive microfabrication processes based on localized electroplating enable the one-step deposition of micro-scale metal structures with outstanding performance, e.g. high electrical conductivity and mechanical strength. They are therefore…

Applied Physics · Physics 2024-08-02 Mirco Nydegger , Zhu-Jun Wang , Marc Willinger , Ralph Spolenak , Alain Reiser

In this paper, we demonstrate by simulation the feasibility of electrostatically doped and therefore reconfigurable planar field-effect-transistor (FET) structure which is based on our already fabricated and published Si-nanowire (SiNW)…

Mesoscale and Nanoscale Physics · Physics 2014-04-11 Tillmann Krauss , Frank Wessely , Udo Schwalke

Wigner crystals are typically confined to ultralow temperatures where thermal motion is frozen out. Moir\'e superlattices in twisted two-dimensional materials have extended their stability to higher temperatures and densities, but rely on…

We demonstrate with a fully quantum-mechanical approach that graphene can function as gate-controllable transistors for pumped spin currents, i.e., a stream of angular momentum induced by the precession of adjacent magnetizations, which…

Mesoscale and Nanoscale Physics · Physics 2010-06-10 F. S. M. Guimarães , A. T. Costa , R. B. Muniz , M. S. Ferreira