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In recent years, the rising demand for close interaction with electronic devices has led to a surge in the popularity of wearable gadgets. While wearable gadgets have generally been rigid due to their utilisation of silicon-based…
Electrical contact resistance to two-dimensional (2D) semiconductors such as monolayer MoS_{2} is a key bottleneck in scaling the 2D field effect transistors (FETs). The 2D semiconductor in contact with three-dimensional metal creates…
Two-dimensional (2D) materials are a new class of materials with interesting physical properties and ranging from nanoelectronics to sensing and photonics. In addition to graphene, the most studied 2D material, monolayers of other layered…
In this article, we study the properties of metal contacts to single-layer molybdenum disulfide (MoS2) crystals, revealing the nature of switching mechanism in MoS2 transistors. On investigating transistor behavior as contact length…
The development of two-dimensional (2D) transition metal dichalcogenides (TMDs) based transistors has been constrained by high contact resistance and inadequate current delivery, primarily stemming from metal-induced gap states and Fermi…
Variability and lack of control in the nature of contacts between metal/MoS2 interface is a major bottleneck in the realisation of high-performance devices based on layered materials for several applications. In this letter, we report on…
Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) are good candidates for high-performance flexible electronics. However, most demonstrations of such flexible field-effect transistors (FETs) to date have been on…
Two-dimensional (2D) layered materials-based field-effect transistors (FETs) are promising for ultimate scaled electron device applications because of the improved electrostatics to atomically thin body thickness. However, compared with the…
The understanding of various types of disorders in atomically thin transition metal dichalcogenides (TMDs), including dangling bonds at the edges, chalcogen deficiencies in the bulk, and charges in the substrate, is of fundamental…
Two-dimensional material (2DM)-based field-effect transistors (FETs), such as molybdenum disulfide (MoS${_2}$)-FETs, have gained significant attention for their potential for ultra-short channels, thereby extending Moore's law. However,…
Future electronics require aggressive scaling of channel material thickness while maintaining device performance. Two-dimensional (2D) semiconductors are promising candidates, but despite over two decades of research, experimental…
Advancing complementary metal-oxide-semiconductor (CMOS) technology into the sub-1-nm angstr\"om-scale technology nodes is expected to involve alternative semiconductor channel materials, as silicon transistors encounter severe performance…
Metal contacts are a key limiter to the electronic performance of two-dimensional (2D) semiconductor devices. Here we present a comprehensive study of contact interfaces between seven metals (Y, Sc, Ag, Al, Ti, Au, Ni, with work functions…
MoS2 atomic layers have recently attracted much interest because of their two-dimensional structure as well as tunable optical, electrical, and mechanical properties for next generation electronic and electro-optical devices. Here we have…
Contact interface properties are important in determining the performances of devices based on atomically thin two-dimensional (2D) materials, especially those with short channels. Understanding the contact interface is therefore quite…
We present a fabrication method for reliably and reproducibly forming electrical contacts to 2D materials, based on the tri-layer resist system. We demonstrate the applicability of this method for epitaxial graphene on silicon carbide…
Two-dimensional (2D) layered materials are promising for replacing Si to overcome the scaling limit of recent ~5 nm-length metal-oxide-semiconductor field-effect transistors (MOSFETs). However, the insulator/2D channel interface severely…
Two-dimensional materials such as graphene and transition metal dichalcogenides (TMDs) are ideal candidates to create ultra-thin electronics suitable for flexible substrates. Although optoelectronic devices based on TMDs have demonstrated…
Two-dimensional (2D) transition metal dichalcogenides (TMDs), such as MoS2, have the potential to be widely used in electronic devices and sensors due to their high carrier mobility and tunable band structure. In 2D TMD devices, surface and…
For the first time, n-type few-layer MoS2 field-effect transistors with graphene/Ti as the hetero-contacts have been fabricated, showing more than 160 mA/mm drain current at 1 {\mu}m gate length with an on-off current ratio of 107. The…