Related papers: Field-free spin-orbit torque switching from geomet…
The demonstration of the generation and control of a pure spin current (without net charge flow) by electric fields and/or temperature gradient has been an essential leap in the quest for low-power consumption electronics. The key issue of…
The influence of the spin-orbit coupling on the magnetic structure of deposited transition metal nanostructure systems has been studied by fully relativistic electronic structure calculations. The interplay of exchange coupling and magnetic…
Use of a spin polarized current for the manipulation of magnetic domain walls in ferromagnetic nanowires has been the subject of intensive research for many years. Recently, due to technological advancements, creating nano-contacts with…
Since the discovery of the spin orbit torque (SOT) induced by spin Hall effect in heavy metals, much effort has been devoted to understanding the mechanism of the charge-to-spin conversion as well as to developing new schemes for high…
We report quantum and semi-classical calculations of spin current and spin-transfer torque in a free-electron Stoner model for systems where the magnetization varies continuously in one dimension.Analytic results are obtained for an…
By submonolayer insertion of Au, Pt, or Pd into Ta / CoFeB / MgO / Ta heterostructures we tune the perpendicular magnetic anisotropy and the coercive field of the ferromagnetic layer. We demonstrate that this has a major influence on the…
We describe a spin logic device with controllable magnetization switching of perpendicularly magnetized ferromagnet / heavy metal structures on a ferroelectric (1-x)[Pb(Mg1/3Nb2/3)O3]-x[PbTiO3] (PMN-PT) substrate using current-induced…
Controlling the magnetic anisotropy of ferromagnetic materials plays a key role in magnetic switching devices and spintronic applications. Examples of spin-orbit torque devices with different magnetic anisotropy geometries (in-plane or…
Shifting electrically a magnetic domain wall (DW) by the spin transfer mechanism is one of the future ways foreseen for the switching of spintronic memories or registers. The classical geometries where the current is injected in the plane…
The current-driven domain wall motion in a ratchet memory due to spin-orbit torques is studied from both full micromagnetic simulations and the one dimensional model. Within the framework of this model, the integration of the anisotropy…
Controlling spin current and magnetic exchange coupling by applying an electric field and achieving high spin injection efficiency at the same time in a nanostructure coupled to ferromagnetic electrodes have been the outstanding challenges…
Reducing energy dissipation while increasing speed in computation and memory is a long-standing challenge for spintronics research. In the last 20 years, femtosecond lasers have emerged as a tool to control the magnetization in specific…
The electrical switching of antiferromagnet (AFM) is very important for the development of ultrafast magnetic random-access memory (MRAM). This task becomes more difficult in antiferromagnetic oxide NiO which has complex anisotropy. We show…
In a collinear antiferromagnet with easy-axis anisotropy, symmetry dictates that the spin wave modes must be doubly degenerate. Theses two modes, distinguished by their opposite polarization and available only in antiferromagnets, give rise…
The control of the magnetism of ultra-thin ferromagnetic layers using an electric field rather than a current, if large enough, would lead to many technologically important applications. To date, while it is usually assumed the changes in…
There are pressing problems with traditional computing, especially for accomplishing data-intensive and real-time tasks, that motivate the development of in-memory computing devices to both store information and perform computation.…
To achieve efficient anti-damping switching of nanoscale magnetic memories with perpendicular magnetic anisotropy using spin-orbit torque requires that the anti-damping spin-orbit torque have a strong out-of-plane component. The spin…
We probe the current-induced magnetic switching of insulating antiferromagnet/heavy metals systems, by electrical spin Hall magnetoresistance measurements and direct imaging, identifying a reversal occurring by domain wall (DW) motion. We…
Spin transfer torques allow the electrical manipulation of the magnetization at room temperature, which is desirable in spintronic devices such as spin transfer torque memories. When combined with spin-orbit coupling, they give rise to…
Active manipulation of spin waves is essential for the development of magnon-based technologies. Here, we demonstrate programmable spin-wave filtering by resetting the spin structure of a pinned 90$^\circ$ N\'{e}el domain wall in a…