Related papers: Field-free spin-orbit torque switching from geomet…
Perpendicular magnetic tunnel junctions (p-MTJs) switched utilizing bipolar electric fields have extensive applications in energy-efficient memory and logic devices. Voltage-controlled magnetic anisotropy linearly lowers the energy barrier…
Terahertz spintronics offers the prospect of devices which are both faster and more energy-efficient. A promising route to achieve this goal is to exploit current-induced spin-orbit torques. However, the high-frequency properties of these…
We demonstrate that spin-orbit coupled electrons in a magnetically doped system exert a spin torque on the local magnetization, without a flowing current, when the chemical potential is modulated in a magnetic field. The spin torque is…
In our numerical study, we identify the best conditions for efficient domain wall motion by spin-orbit torques originating from the Spin Hall effect or Rashba effect. We demonstrate that the effect depends critically on the domain wall…
We report that synthetic antiferromagnets (SAFs) can be efficiently switched by spin-orbit torques (SOTs) and the switching scheme does not obey the usual SOT switching rule. We show that both the positive and negative spin Hall angle…
Perpendicular switching of a ferromagnet induced by spin torques is crucial for building high density spin-based memory and logic devices, where out-of-plane spin polarization ($\sigma_z$) has become a long sought-after goal for…
The control of magnetic domain walls is essential for the magnetic-based memory and logic applications. As an elementary excitation of magnetic order, spin wave is capable of moving magnetic domain walls just as the conducting electric…
An attractive feature of magnetic adatoms and molecules for nanoscale applications is their superparamagnetism, the preferred alignment of their spin along an easy axis preventing undesired spin reversal. The underlying magnetic anisotropy…
Through systematics density functional calculations, the mechanism of the substrate induced spin reorientation transition in FePc/O-Cu(110) was explained in terms of charge transfer and rearrangement of Fe-d orbitals. Moreover, we found…
Based on the micromagnetic simulations the magnetization switching in a triangle magnetic element by voltage-control of magnetic anisotropy and Dzyaloshinskii-Moriya interaction under in-plane magnetic field is proposed. The proposed…
We report on the controlled switching of domain wall (DW) magnetization in aligned stripe domain structures, stabilized in [Co (0.44 nm)/Pt (0.7 nm)]$_X$ ($X = 48$, 100, 150) multilayers with perpendicular magnetic anisotropy. The switching…
The dynamics of magnetic domain walls along ferromagnetic strips with spatially modulated perpendicular magnetic anisotropy is theoretically studied by means of micromagnetic simulations. Ferromagnetic layers with a periodic sawtooth…
Conventional spintronic mechanisms, such as spin-transfer and spin-orbit torques based on the spin current, rely on breaking time-reversal symmetry to manipulate magnetic moments. In contrast, for spatially separated dual spin currents, the…
We present a model for current-driven motion of a magnetic domain-wall line, in which the dynamics of the domain wall is equivalent to that of an overdamped vortex line in an anisotropic pinning potential. This potential has both extrinsic…
We demonstrate numerically the ability to displace a magnetic domain wall by a remote spin current injection. We consider a long and narrow magnetic nanostripe with a single domain wall (DW). The spin-polarized current is injected…
Spin-orbit torque (SOT)-induced magnetization switching shows promise for realizing ultrafast and reliable spintronics devices. Bipolar switching of perpendicular magnetization via SOT is achieved under an in-plane magnetic field collinear…
Electrical switching of magnetization via spin-orbit torque (SOT) is of great potential in fast, dense, energy-efficient nonvolatile magnetic memory and logic technologies. Recently, enormous efforts have been stimulated to investigate…
We report that by measuring current-induced hysteresis loop shift versus in-plane bias magnetic field, the spin Hall effect (SHE) contribution of the current-induced effective field per current density, $\chi_{SHE}$, can be estimated for Pt…
We theoretically and experimentally analyze the pinning of a magnetic domain wall (DW) at engineered anisotropy variations in Pt/Co/Pt strips with perpendicular magnetic anisotropy. An analytical model is derived showing that a step in the…
In spite of the absence of a macroscopic magnetic moment, an anti-ferromagnet is spin-polarized on an atomic scale. The electric current passing through a conducting anti-ferromagnet is polarized as well, leading to spin-transfer torques…