Related papers: Field-free spin-orbit torque switching from geomet…
Several recent experimental studies have confirmed the possibility of switching the magnetization direction in the small magnetic domains by pumping large spin-polarized currents through them. On the basis of equations proposed by…
We study deterministic magnetic reversal of a perpendicularly magnetized Co layer in a Co/MgO/Ta nano-square driven by spin Hall torque from an in-plane current flowing in an underlying Pt layer. The rate-limiting step of the switching…
Magnetic domain walls are pinned strongly by abrupt changes in magnetic anisotropy. When driven into oscillation by a spin-polarized current, locally pinned domain walls can be exploited as tunable sources of short-wavelength spin waves.…
We discuss a spin-transfer torque device, where the role of the soft ferromagnetic layer is played by a magnetic particle or a magnetic molecule, in weak tunnel contact with two spin polarized leads. We investigate if the magnetization of…
The ability to switch magnetic elements by spin-orbit-induced torques has recently attracted much attention for a path towards high-performance, non-volatile memories with low power consumption. Realizing efficient spin-orbit-based…
Magnetic heterostructures that combine large spin-orbit torque efficiency, perpendicular magnetic anisotropy, and low resistivity are key to develop electrically-controlled memory and logic devices. Here we report on vector measurements of…
Deterministic magnetization switching using spin-orbit torque (SOT) has recently emerged as an efficient means to electrically control the magnetic state of ultrathin magnets. The SOT switching still lacks in oscillatory switching…
Voltage-driven spin transfer torques in magnetic tunnel junctions provide an outstanding tool to design advanced spin-based devices for memory and reprogrammable logic applications. The non-linear voltage dependence of the torque has a…
L10-FePt distinguishes itself for its ultrahigh perpendicular magnetic anisotropy (PMA), which enables memory cells with sufficient thermal stability to scale down to 3 nm. The recently discovered "bulk" spin-orbit torques in L10-FePt…
Using the complex stereographic variable representation for the macrospin, from a study of the nonlinear dynamics underlying the generalized Landau-Lifshitz(LL) equation with Gilbert damping, we show that the spin-transfer torque is…
Synthetic antiferromagnets (SAF) have been proposed to replace ferromagnets in magnetic memory devices to reduce the stray field, increase the storage density and improve the thermal stability. Here we investigate the spin-orbit torque in a…
Despite the potential advantages of information storage in antiferromagnetically coupled materials, it remains unclear whether one can control the magnetic moment orientation efficiently because of the cancelled magnetic moment. Here, we…
Recently, unconventional spin-orbit torques (SOTs) with tunable spin generation open new pathways for designing novel magnetization control for cutting-edge spintronics innovations. A leading research thrust is to develop field-free…
A method for deterministic control of the magnetic order parameter using an electrical stimulus is highly desired for the new generation of spintronic and magnetoelectronic devices. Much effort has been focused on magnetic domain-wall…
It is crucial to realize field-free, deterministic, current-induced switching in spin-orbit torque magnetic random-access memory (SOT-MRAM) with perpendicular magnetic anisotropy (PMA). A tentative solution has emerged recently, which…
We report a theoretical overview of the magnetic domain wall behavior under an electric current in infinitely-long nanotubes with azimuthal magnetization, combining the $1$D analytic model and micromagnetic simulations. We highlight effects…
The increasing need to store large amounts of information with an ultra-dense, reliable, low power and low cost memory device is driving aggressive efforts to improve upon current perpendicular magnetic recording technology. However, the…
Spin-orbit torques promise ultra-efficient magnetization switching used for advanced devices based on emergent quasi-particles such as domain walls and skyrmions. Recently, the spin structure dynamics, materials and systems with tailored…
Memory and logic devices that encode information in magnetic domains rely on the controlled injection of domain walls to reach their full potential. In this work, we exploit the chiral coupling induced by the Dzyaloshinskii-Moriya…
Current-induced spin-orbit torque (SOT) has emerged as a promising method for achieving energy-efficient magnetization switching in advanced spintronic devices. However, technological advancement has been inadequate because an external…