Related papers: Improving 3D NAND Flash Memory Lifetime by Tolerat…
Recent nano-technological advances enable the Monolithic 3D (M3D) integration of multiple memory and logic layers in a single chip, allowing for fine-grained connections between layers and significantly alleviating main memory bottlenecks.…
The read channel in Flash memory systems degrades over time because the Fowler-Nordheim tunneling used to apply charge to the floating gate eventually compromises the integrity of the cell because of tunnel oxide degradation. While…
This article summarizes key results of our work on experimental characterization and analysis of latency variation and latency-reliability trade-offs in modern DRAM chips, which was published in SIGMETRICS 2016, and examines the work's…
Current portable memory device relies heavily on flash memory technology for its implementation. New generation of non-volatile memory is likely to replace floating gates, charge-trapping memory currently still suffering from inadequate…
The read channel of a Flash memory cell degrades after repetitive program and erase (P/E) operations. This degradation is often modeled as a function of the number of P/E cycles. In contrast, this paper models the degradation as a function…
Due to increasing cache sizes and large leakage consumption of SRAM device, conventional SRAM caches contribute significantly to the processor power consumption. Recently researchers have used non-volatile memory devices to design caches,…
Dynamic Random Access Memory (DRAM) is the de-facto choice for main memory devices due to its cost-effectiveness. It offers a larger capacity and higher bandwidth compared to SRAM but is slower than the latter. With each passing generation,…
Storage-class memory (SCM) combines the benefits of a solid-state memory, such as high-performance and robustness, with the archival capabilities and low cost of conventional hard-disk magnetic storage. Among candidate solid-state…
This article features extended summaries and retrospectives of some of the recent research done by our group, SAFARI, on (1) understanding, characterizing, and modeling various critical properties of modern DRAM and NAND flash memory, the…
Flash-based disk caches, for example Bcache and Flashcache, has gained tremendous popularity in industry in the last decade because of its low energy consumption, non-volatile nature and high I/O speed. But these cache systems have a worse…
Main memories play an important role in overall energy consumption of embedded systems. Using conventional memory technologies in future designs in nanoscale era causes a drastic increase in leakage power consumption and temperature-related…
The error correcting performance of multi-level-cell (MLC) NAND flash memory is closely related to the block length of error correcting codes (ECCs) and log-likelihood-ratios (LLRs) of the read-voltage thresholds. Driven by this issue, this…
The rapid growth of LLMs demands high-throughput, memory-capacity-intensive inference on resource-constrained edge devices, where single-batch decoding remains fundamentally memory-bound. Existing out-of-core GPU-based and SSD-like…
The scaling of high density NOR Flash memory devices with multi level cell (MLC) hits the reliability break wall because of relatively high intrinsic bit error rate (IBER). The chip maker companies offer two solutions to meet the output bit…
For large scale distributed storage systems, flash memories are an excellent choice because flash memories consume less power, take lesser floor space for a target throughput and provide faster access to data. In a traditional distributed…
Storing digital information, ensuring the accuracy, steady and uninterrupted access to the data are considered as fundamental challenges in enterprise-class organizations and companies. In recent years, new types of storage systems such as…
The NAND flash memory channel is corrupted by different types of noises, such as the data retention noise and the wear-out noise, which lead to unknown channel offset and make the flash memory channel non-stationary. In the literature,…
Today, flash memory are strongly used in the embedded system domain. NAND flash memories are the building block of main secondary storage systems. Such memories present many benefits in terms of data density, I/O performance, shock…
Recently introduced 3D vertical flash memory is expected to be a disruptive technology since it overcomes scaling challenges of conventional 2D planar flash memory by stacking up cells in the vertical direction. However, 3D vertical flash…
The practical NAND flash memory suffers from various non-stationary noises that are difficult to be predicted. Furthermore, the data retention noise induced channel offset is unknown during the readback process. This severely affects the…