Recently introduced 3D vertical flash memory is expected to be a disruptive technology since it overcomes scaling challenges of conventional 2D planar flash memory by stacking up cells in the vertical direction. However, 3D vertical flash memory suffers from a new problem known as fast detrapping, which is a rapid charge loss problem. In this paper, we propose a scheme to compensate the effect of fast detrapping by intentional inter-cell interference (ICI). In order to properly control the intentional ICI, our scheme relies on a coding technique that incorporates the side information of fast detrapping during the encoding stage. This technique is closely connected to the well-known problem of coding in a memory with defective cells. Numerical results show that the proposed scheme can effectively address the problem of fast detrapping.
@article{arxiv.1410.8541,
title = {Coding scheme for 3D vertical flash memory},
author = {Yongjune Kim and Robert Mateescu and Seung-Hwan Song and Zvonimir Bandic and B. V. K. Vijaya Kumar},
journal= {arXiv preprint arXiv:1410.8541},
year = {2015}
}
Comments
7 pages, 9 figures. accepted to ICC 2015. arXiv admin note: text overlap with arXiv:1410.1775