Related papers: Spin transistor built on 2D van der Waals heterost…
New mechanism of magnetoresistance, based on tunneling-emission of spin polarized electrons from ferromagnets (FM) into semiconductors (S) and precession of electron spin in the semiconductor layer under external magnetic field, is…
Magnon based spintronic devices require the modulation of magnon spin transport for their operations. We provide a proof-of-principle of an unconventional two-terminal non-local magnon transport device where the same contact is…
Spin injection efficiency based on conventional and/or half-metallic ferromagnet/semiconductor is greatly limited by the Schmidt obstacle due to conductivity mismatch, here we proposed that by replacing the metallic injectors with spin…
A "spin-flip transistor" is a lateral spin valve consisting of ferromagnetic source drain contacts to a thin-film normal-metal island with an electrically floating ferromagnetic base contact on top. We analyze the \emph{dc}-current-driven…
Since the prediction of a new topological state of matter in graphene, materials acting as topological insulators have attracted wide attention. Shortly after the theoretical proposal for a mercury telluride (HgTe)-based two-dimensional…
Momentum-resolved spin-polarized bands are a key ingredient in many proposed spintronic devices, but their existence often relies on lattice commensurability or strong spin-orbit coupling. By a large-scale DFT calculation (up to 4212…
The discovery of van der Waals (vdW) magnets opened up a new paradigm for condensed matter physics and spintronic technologies. However, the operations of active spintronic devices with vdW magnets are so far limited to cryogenic…
Using field-effect transistors (FETs) to explore atomically thin magnetic semiconductors with transport measurements is difficult, because the very narrow bands of most 2D magnetic semiconductors cause carrier localization, preventing…
Spin-polarized light-emitting diodes (spin-LEDs) convert the electronic spin information to photon circular polarization, offering potential applications including spin amplification, optical communications, and advanced imaging. The…
Magnetism typically arises from the joint effect of Fermi statistics and repulsive Coulomb interactions, which favors ground states with non-zero electron spin. As a result, controlling spin magnetism with electric fields---a longstanding…
Magnetic topology is central to modern quantum magnet, where spin chirality governs exotic spin winding, real-space Berry phase, and topological Hall effect. A key unresolved challenge is how to electrically switch topological spin…
We provide a theoretical description of diffusive charge and spin transport in hybrid devices containing altermagnets. Based on recently derived drift--diffusion equations for coupled charge and spin dynamics and general boundary…
All-electrical control of spin transport in nanostructures has been the central interest and chal- lenge of spin physics and spintronics. Here we demonstrate on-chip spin polarizing/filtering actions by driving the gate-defined one…
All-electrical (magnetic-material-free) spin injection is one of the outstanding goals in spintronics. Topological insulators (TIs) have been recognized as a promising electrically controlled spin source thanks to the strong spin-orbit…
Emerging two-dimensional (2D) magnetic semiconductors represent transformative platforms to explore magneto-optics and opto-spintronic applications. Though 2D opto-spintronics has attracted tremendous research efforts in spin-dependent…
We develop an InAs nanowire gate-all-around field-effect transistor using a transparent conductive zinc oxide (ZnO) gate electrode, which is in-situ atomic layer deposited after growth of gate insulator of Al2O3. We perform…
As a hallmark of electronic correlation, spin-charge interplay underlies many emergent phenomena in doped Mott insulators, such as high-temperature superconductivity, whereas the half-filled parent state is usually electronically frozen…
Spin-valve effect has been the focus of spintronics over the last decades due to its potential in many spintronic devices. Two-dimensional (2D) van der Waals (vdW) materials are highly expected to build the spin-valve heterojunction.…
Two types of spintronic devices on the base of magnetic nanostructures containing silicon dioxide films with cobalt nanoparticles SiO2(Co) on GaAs substrate - magnetic sensors and field-effect transistor governed by applied magnetic field -…
Vertical graphene heterostructures have been introduced as an alternative architecture for electronic devices by using quantum tunneling. Here, we present that the current on/off ratio of vertical graphene field-effect transistors is…