Related papers: Spin transistor built on 2D van der Waals heterost…
Memristors are non-volatile nano-resistors. Their resistance can be tuned by applied currents or voltages and set to a large number of levels between two limit values. Thanks to these properties, memristors are ideal building blocks for a…
Two-dimensional (2D) semiconductors have emerged as leading candidates for the development of low-power and multifunctional computing applications, thanks to their qualities such as layer-dependent band gap tunability, high carrier…
Spin-orbit torque enables the electrical control of the orientation of ferromagnets' or antiferromagnets' order parameter. In this work we consider antiferromagnets in which the magnetic sublattices are connected by inversion+time reversal…
The recent discovery of altermagnets, which exhibit spin splitting without net magnetization, opens new directions for spintronics beyond the limits of ferromagnets, antiferromagnets, and spin orbit coupled systems. We investigate spin…
We review several proposed spintronic devices that can provide new functionality or improve available functions of electronic devices. In particular, we discuss a high mobility field effect spin transistor, an all-metal spin transistor, and…
By exploiting proximity coupling, we probe the spin state of the surface layers of CrI3, a van der Waals magnetic semiconductor, by measuring the induced magnetoresistance (MR) of Pt in Pt/CrI3 nano-devices. We fabricate the devices with…
The magnetic tunnel junction (MTJ) is a backbone device for spintronics. Realizing next generation energy efficient MTJs will require operating mechanisms beyond the standard means of applying magnetic fields or large electrical currents.…
Magnetic tunnel junctions (MTJs) based on all-two dimensional (2D) van der Waals heterostructures with sharp and clean interfaces in atomic scale are essential for the application of next-generation spintronics. However, the lack of…
A longstanding goal of research in semiconductor spintronics is the ability to inject, modulate, and detect electron spin in a single device. A simple prototype consists of a lateral semiconductor channel with two ferromagnetic contacts,…
Topological insulators (TIs) hold great promises for new spin-related phenomena and applications thanks to the spin texture of their surface states. However, a versatile platform allowing for the exploitation of these assets is still…
We demonstrate with a fully quantum-mechanical approach that graphene can function as gate-controllable transistors for pumped spin currents, i.e., a stream of angular momentum induced by the precession of adjacent magnetizations, which…
With its potential for drastically reduced operation power of information processing devices, electric field control of magnetism has generated huge research interest. Recently, novel perspectives offered by the inherently large spin-orbit…
The exploration of ferroelectric phase transitions enables an in-depth understanding of ferroelectric switching and promising applications in information storage. However, controllably tuning the dynamics of ferroelectric phase transitions…
Ferroelectric polarization switching in electrically controlled van der Waals multiferroic tunnel junctions (vdW-MFTJs) causes atomic migration, compromising device stability and fatigue resistance. Here we propose a fully magnetically…
The exceptional properties of two-dimensional (2D) magnet materials present a novel approach to fabricate functional magnetic tunnel junctions (MTJ) by constructing full van der Waals (vdW) heterostructures with atomically sharp and clean…
We present results on the magnetoresistance of the system Ni/Al203/n-doped Si/Al2O3/Ni in fabricated nanostructures. The results at temperature of 14K reveal a 75% magnetoresistance that decreases in value up to approximately 30K where the…
Transistors play a vital role in classical computers, and their quantum mechanical counterparts could potentially be as important in quantum computers. Where a classical transistor is operated as a switch that either blocks or allows an…
A hybrid ferromagnet-superconductor spin valve is proposed. Its operation relies on the interplay between nonequilibrium transport and proximity-induced exchange coupling in superconductors. Huge tunnel magnetoresistance values as large as…
The proximity of a transition metal dichalcogenide (TMD) to graphene imprints a rich spin texture in graphene and complements its high quality charge/spin transport by inducing spin-orbit coupling (SOC). Rashba and valley-Zeeman SOCs are…
As transistor footprint scales down to sub-10 nm regime, the process development for advancing to further technology nodes has encountered slowdowns. Achieving greater functionality within a single chip requires concurrent development at…