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Properties of complex oxide thin films can be tuned over a range of values as a function of mismatch, composition, orientation, and structure. Here, we report a strategy for growing structured epitaxial thermoelectric thin films leading to…

Materials Science · Physics 2013-10-08 D. Pravarthana , O. I. Lebedev , D. Chateigner , S. Hebert , P. A. Salvador , W. Prellier

SrSnO3 (SSO) is an emerging ultra-wide bandgap (UWBG) semiconductor with potential for highpower applications. In-plane compressive strain was recently shown to stabilize the high temperature tetragonal phase of SSO at room temperature (RT)…

Low temperature growth Pr0.7Ca0.3MnO3 (PCMO) thin film showed high performance in electric field induced resistance switching (RS). To understand the micro-mechanism of RS in Metal/PCMO/Metal devices, structure evolution of PCMO under…

Mesoscale and Nanoscale Physics · Physics 2012-07-17 Zhaoliang Liao , Peng Gao , Xuedong Bai , Dongmin Chen

We investigated the crystal and electronic structures of ferroelectric Bi4Ti3O12 (BiT) single crystalline thin films site-specifically substituted with LaCoO3 (LCO). The epitaxial films were grown by pulsed laser epitaxy on NdGaO3 and…

Materials Science · Physics 2015-05-13 Woo Seok Choi , Ho Nyung Lee

With reduced dimensionality, it is often easier to modify the properties of ultra-thin films than their bulk counterparts. Strain engineering, usually achieved by choosing appropriate substrates, has been proven effective in controlling the…

Mesoscale and Nanoscale Physics · Physics 2017-10-31 S. Thomas , B. Kuiper , J. Hu , J. Smit , Z. Liao , Z. Zhong , G. Rijnders , A. Vailionis , R. Wu , G. Koster , J. Xia

We have investigated the atomically-resolved substrate and homoepitaxial thin film surfaces of SrTiO3(001) using low-temperature scanning tunneling microscopy/spectroscopy (STM/STS) combined with pulsed laser deposition (PLD). It was found…

Materials Science · Physics 2015-05-18 Takeo Ohsawa , Katsuya Iwaya , Ryota Shimizu , Tomihiro Hashizume , Taro Hitosugi

Bodies in relative motion separated by a gap of a few nanometers can experience a tiny friction force. This non-contact dissipation can have various origins and can be successfully measured by a sensitive pendulum atomic force microscope…

Strongly Correlated Electrons · Physics 2018-09-17 Marcin Kisiel , Oleg O. Brovko , Dilek Yildiz , Remy Pawlak , Urs Gysin , Erio Tosatti , Ernst Meyer

The slow kinetics of the oxygen reduction reaction (ORR) is one of the key challenges in developing high performance energy devices, such as solid oxide fuel cells. Straining a film by growing on a lattice-mismatched substrate has been a…

Surface acoustic wave devices are key components for processing radio frequency signals in wireless communication because these devices offer simultaneously high performance, compact size and low cost. The optimization of the device…

We report the growth of thin films of Sr1-xCaxRuO3 on SrTiO3 and MgO substrates by metalorganic aerosol deposition. The structure and microstructure is characterized by X-ray diffraction and room-temperature scanning tunnelling microscopy…

Strongly Correlated Electrons · Physics 2010-03-03 M. Schneider , V. Moshnyaga , P. Gegenwart

We electron-dope single crystal samples of SrTiO_3 by exposing them to Ar^+ irradiation and observe carrier mobility similar in its magnitude and temperature dependence to the carrier mobility in other electron-doped SrTiO3 systems. We find…

Other Condensed Matter · Physics 2009-11-13 Moty Schultz , Lior Klein

Transition metal oxides have been extensively studied and utilized as efficient catalysts. However, the strongly correlated behavior which often results in intriguing emergent phenomena in these materials has been mostly overlooked in…

Amorphous oxide thin films play a fundamental role in state-of-the art interferometry experiments, such as gravitational wave detectors where these films compose the high reflectance mirrors of end and input masses. The sensitivity of these…

Next generation quantum technologies will need to rely on efficient transduction between electrical, optical, and mechanical quantum degrees of freedom to generate large-scale entanglement over large distances. The performance of such…

NiFe$_2$O$_4$ thin films with varying thickness were grown on SrTiO$_3$(001) by reactive molecular beam epitaxy. Soft and hard x-ray photoelectron spectroscopy measurements reveal a homogeneous cation distribution throughout the whole film…

Materials Science · Physics 2020-07-01 J. Rodewald , J. Thien , K. Ruwisch , F. Bertram , K. Kuepper , J. Wollschläger

In this paper, the dynamics of bias stress phenomenon in Sexithiophene (T6) Field Effect Transistors (FETs) has been investigated. T6 FETs have been fabricated by vacuum depositing films with thickness from 10 nm to 130 nm on Si/SiO2…

Materials Science · Physics 2015-05-13 F. V. Di Girolamo , C. Aruta , M. Barra , P. D Angelo , A. Cassinese

The strain dependence of electric and magnetic properties has been widely investigated, both from a fundamental science perspective and an applications point of view. Electromechanical coupling through field-induced polarization rotation…

Materials Science · Physics 2015-06-22 Zhiguang Wang , Yaojin Wang , Haosu Luo , Jiefang Li , D. Viehland

Strain engineering is a powerful mean for tuning the various functionalities of ABO3 perovskite oxide thin films. Rare-earth orthoferrite RFeO3 materials such as NdFeO3 (NFO) are of prime interest because of their intriguing magnetic…

We report on a healing of defects at room temperature in the organic semiconductor pentacene. This peculiar effect is a direct consequence of the weak intermolecular interaction which is characteristic of organic semiconductors. Pentacene…

Materials Science · Physics 2009-12-21 Wolfgang L. Kalb , Fabian Meier , Kurt Mattenberger , Bertram Batlogg

We report on a systematic study of the temperature-dependent Hall coefficient and thermoelectric power in ultra-thin metallic LaNiO$_3$ films that reveal a strain-induced, self-doping carrier transition that is inaccessible in the bulk. As…

Strongly Correlated Electrons · Physics 2012-04-11 E. J. Moon , J. M. Rondinelli , N. Prasai , B. A. Gray , M. Kareev , J. Chakhalian , J. L. Cohn