Related papers: Tuning oxygen vacancy diffusion through strain in …
The subtle balance of electronic correlations, crystal field splitting and spin--orbit coupling in layered Ir$^{4+}$ oxides can give rise to novel electronic and magnetic phases. Experimental progress in this field relies on the synthesis…
Epitaxial strain is a powerful means to engineer emergent phenomena in thin films and heterostructures. Here, we demonstrate that KTaO3, a cubic perovskite in bulk form, can be epitaxially strained into a highly tunable ferroelectric. KTaO3…
The material BaBiO$_{3}$ is known for its insulating character. However, for thin films, in the ultra-thin limit, metallicity is expected because BaBiO$_{3}$ is suggested to return to its undistorted cubic phase where the oxygen octahedra…
We report strain engineering of superconductivity in RuO$_2$ singlecrystalline films, which are epitaxially grown on rutile TiO$_2$ and MgF$_2$ substrates with various crystal orientations. Systematic mappings between the superconducting…
Oxygen packaging in transition metal oxides determines the metal-oxygen hybridization and electronic occupation at metal orbitals. Strontium vanadate (SrVO$_3$), having a single electron in a $3d$ orbital, is thought to be the simplest…
We report on a comprehensive theoretical and experimental investigation of thermal conductivity in indium-tin-oxide (ITO) thin films with various Ga concentrations (0-30 at. %) deposited by spray pyrolysis technique. X-Ray diffraction (XRD)…
We report herein fabrication and characterization of a thin-film transistor (TFT) using single-crystalline, epitaxial SrTiO3 film, which was grown by a pulsed laser deposition technique followed by the thermal annealing treatment in an…
TiO2 is a technologically important material. In particular, its anatase polymorph plays a major role in photocatalysis, which can also accommodate charged and neutral vacancies. There is, however, scant theoretical work on the vacancy…
Reduction in metal-oxide thin films has been suggested as the key mechanism responsible for forming conductive nanofilaments within solid-state memory devices, enabling their resistive switching capacity. The quantitative spatial…
Oxygen vacancies are a common source of excess electrons in complex oxides. In Mott insulators these additional electrons can induce a metal-insulator transition (MIT), fundamentally altering the electronic properties of the system. Here we…
High quality vanadium sesquioxide V2O3 films (170-1100 {\AA}) were grown using the pulsed laser deposition technique on (0001)-oriented sapphire substrates, and the effects of film thickness on the lattice strain and electronic properties…
We present a systematic study of the properties of TiN films by varying the deposition conditions in an ultra-high-vacuum reactive magnetron sputtering chamber. By increasing the deposition pressure from 2 to 9 mTorr while keeping a nearly…
Oxygen-deficient TiO$_2$ in the rutile structure as well as the Ti$_3$O$_5$ Magn{\'e}li phase is investigated within the charge self-consistent combination of density functional theory (DFT) with dynamical mean-field theory (DMFT). It is…
We fabricated NiFe$_\textrm{2}$O$_\textrm{x}$ thin films on MgAl$_2$O$_4$(001) substrates by reactive dc magnetron co-sputtering varying the oxygen partial pressure during deposition. The fabrication of a variable material with oxygen…
$\textit{Ab initio}$ calculations were employed to investigate the effect of oxygen concentration dependent Ti vacancies formation on the core electron binding energy shifts in cubic titanium oxynitride (Ti$_{1-\delta}$O$_x$N$_{1-x}$). It…
The effect of high tensile strain and low dimensionality on the magnetic and electronic properties of CaMnO$_3$ ultrathin films, epitaxially grown on SrTiO$_3$ substrates, are experimentally studied and theoretically analyzed. By means of…
Freestanding perovskite oxide membranes provide a novel platform for elastic strain engineering, enabling the manipulation of phonon transport free from substrate clamping. In this work, we investigate the thermal transport properties of…
The formation energies of the oxygen vacancy and titanium interstitial in rutile TiO2 were calculated by the screened exchange (sX) hybrid density functional method, which gives a band gap of 3.1 eV, close to the experimental value. The O…
We present a theoretical study of the impact of oxygen diffusion in oxide crystals on metal dopants ionic state and the conduction type under dynamic changes. The slow changes under thermal equilibrium are provided in a companion, Part I…
The amount of oxygen incorporated into MgB2 thin films upon exposure to atmospheric gasses is found to depend strongly on the material's stoichiometry. Rutherford backscattering spectroscopy was used to monitor changes in oxygen…