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We report the enthalpy of oxygen vacancy formation in thin films of electron-doped SrTiO$_{3}$, under different degrees of epitaxial stress. We demonstrate that both compressive and tensile strain decrease this energy at a very similar…

Materials Science · Physics 2017-05-24 L. Iglesias , A. Sarantopoulos , C. Magen , F. Rivadulla

In oxide epitaxy, the growth temperature and background oxygen partial pressure are considered as the most critical factors that control the phase stability of an oxide thin film. Here, we report an unusual case wherein diffusion of oxygen…

Materials Science · Physics 2021-01-27 Saikat Das , Tadakatsu Ohkubo , Shinya Kasai , Yusuke Kozuka

The presence of oxygen vacancy, as well as ordering of vacancies plays an important role in determining the electronic, ionic and thermal transport properties of many transition metal oxide materials. Controlling the concentration of oxygen…

Mesoscale and Nanoscale Physics · Physics 2018-12-05 Xue Rui , Robert Klie

We use first-principles calculations to investigate the stability of bi-axially strained \textit{Pnma} perovskite CaMnO$_3$ towards the formation of oxygen vacancies. Our motivation is provided by promising indications that novel material…

Materials Science · Physics 2013-08-28 Ulrich Aschauer , Reto Pfenninger , Sverre M. Selbach , Tor Grande , Nicola A. Spaldin

The interrelation between the epitaxial strain and oxygen deficiency in La0.7Ca0.3MnO3-{\delta} thin films was studied in terms of structural and functional properties. The films with a thickness of 1000{\AA} were prepared using a PLD…

Materials Science · Physics 2015-06-23 K. Kawashima , G. Logvenov , G. Christiani , H. -U. Habermeier

Epitaxially grown SrTiO$_{3}$ (STO) thin films are material enablers for a number of critical energy-conversion and information-storage technologies like electrochemical electrode coatings, solid oxide fuel cells and random access memories.…

Materials Science · Physics 2020-12-04 Zizhen Zhou , Dewei Chu , Claudio Cazorla

Oxygen vacancies, especially their distribution, are directly coupled to the electromagnetic properties of oxides and related emergent functionalities that have implication in device applications. Here using a homoepitaxial strontium…

Strongly Correlated Electrons · Physics 2017-09-22 Saikat Das , Bo Wang , Ye Cao , Myung Rae Cho , Yeong Jae Shin , Sang Mo Yang , Lingfei Wang , Minu Kim , Sergei V. Kalinin , Long-Qing Chen , Tae Won Noh

The ability to manipulate oxygen anion defects rather than metal cations in complex oxides can facilitate creating new functionalities critical for emerging energy and device technologies. However, the difficulty in activating oxygen at…

Oxygen vacancy formation energy is an important quantity for enabling fast oxygen diffusion and oxygen catalysis in technologies like solid oxide fuel cells. Both previous literature in various systems and our calculations in LaMnO3,…

Materials Science · Physics 2017-11-29 Tam Mayeshiba , Dane Morgan

Epitaxial strain provides important pathways to control the magnetic and electronic states in transition metal oxides. However, the large strain is usually accompanied by a strong reduction of the oxygen vacancy formation energy, which…

Oxygen vacancies in transition metal oxides facilitate catalysis critical for energy storage and generation. However, it has proven elusive to promote vacancies at the lower temperatures required for operation in devices such as metal-air…

Materials Science · Physics 2016-06-08 Jonathan R. Petrie , Hyoungjeen Jeen , Sara C. Barron , Tricia L. Meyer , Ho Nyung Lee

The temperature dependence of the real and imaginary parts of magnetic susceptibility of YBa2Cu3O7-{\delta} superconducting thin films were researched at the electron irradiation with the energy of 2{\cdot}10<4> eV in the magnetic field of…

Superconductivity · Physics 2012-06-26 Viktor O. Ledenyov , Dimitri O. Ledenyov , Oleg P. Ledenyov

We demonstrate control of helimagnetic order in biaxially strained SrFeO3 thin films using neutron diffraction and resonant soft x-ray scattering. SrFeO3, a negative charge-transfer oxide, exhibits a complex magnetic phase diagram that…

Despite of the tremendous efforts spent on the oxygen vacancy migration in determining the property optimization of oxygen-vacancy enrichment transition metal oxides, few has focused on their dynamic behaviors non-equilibrium states. In…

Materials Science · Physics 2019-10-16 Bingbing Zhang , Xu He , Jiali Zhao , Can Yu , Haidan Wen , Sheng Meng , Eric Bousquet , Yuelin Li , Kuijuan Jin , Ye Tao , Haizhong Guo

Elemental defects in transition metal oxides is an important and intriguing subject that result in modifications in variety of physical properties including atomic and electronic structure, optical and magnetic properties. Understanding the…

Advances in complex oxide heteroepitaxy have highlighted the enormous potential of utilizing strain engineering via lattice mismatch to control ferroelectricity in thin-film heterostructures. This approach, however, lacks the ability to…

Complex oxide functionality, such as ferroelectricity, magnetism or superconductivity is often achieved in epitaxial thin-film geometries. Oxygen vacancies tend to be the dominant type of defect in these materials but a fundamental…

Materials Science · Physics 2022-02-23 Moloud Kaviani , Ulrich Aschauer

We demonstrate the tunability of oxygen content in pulsed laser deposition (PLD)-grown barium stannate (BaSn$O_3$, BSO) thin films by precisely controlling the background oxygen pressure over a broad range from 0.0004 mbar to 0.13 mbar. The…

Materials Science · Physics 2025-03-18 Wilson Román Acevedo , Myriam H. Aguirre , Beatriz Noheda , Diego Rubi

The large spin-orbit coupling in iridium oxides plays a significant role in driving novel physical behaviors, including emergent phenomena in the films and heterostructures of perovskite and Ruddlesden-Popper iridates. In this work, we…

The quantum Hall conductance in monolayer graphene on an epitaxial SrTiO3 (STO) thin film is studied to understand the role of oxygen vacancies in determining the dielectric properties of STO. As the gate voltage sweep range is gradually…

Materials Science · Physics 2017-05-17 Kyeong Tae Kang , Haeyong Kang , Jeongmin Park , Dongseok Suh , Woo Seok Choi
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