Related papers: Characterization and modeling of thermally-induced…
N-type doping in Si by shallow impurities, such as P, As and Sb, exhibits an intrinsic limit due to the Fermi-level pinning via defect complexes at high doping concentrations. Here we demonstrate that doping Si with the chalcogen Te by…
Intrinsic magnetic van der Waals (vdW) materials have attracted much attention, especially Fe$_{3}$GeTe$_{2}$ (FGT), which exhibits highly tunable properties. However, despite vast efforts, there are still several challenging issues to be…
We investigate the effects of transition metals (TM) on the electronic doping and scattering in graphene using molecular beam epitaxy combined with in situ transport measurements. The room temperature deposition of TM onto graphene produces…
We find that a donor-doped band-gap material can enhance the overall high-order harmonic generation (HHG) efficiency by several orders of magnitude, compared with undoped and acceptor-doped materials. This significant enhancement, predicted…
Polarisation doping of Al$_x$Ga$_{1-x}$N, through grading of $x$, has realised major improvements in $p$-type conductivity in ultraviolet (UV) light-emitting diodes (LEDs) compared to conventional impurity doping. However, the exact balance…
Ga2O3 is being actively explored for high-power and high-temperature electronics, deep-ultraviolet optoelectronics, and other applications. Efficient n-type doping of Ga2O3 has been achieved, but p-type doping faces fundamental obstacles…
Rare-event searches including dark matter, coherent elastic neutrino--nucleus scattering (CE$\nu$NS), and neutrinoless double-beta decay (0$\nu\beta\beta$) require high-purity germanium (HPGe) detectors with ultralow noise, stable…
Annealing Mg-implanted homoepitaxial GaN at temperatures at or above 1400 {\deg}C eliminates the formation of inversion domains and leads to improved dopant activation efficiency. Extended defects in the form of inversion domains contain…
In this work we present the characterization of a Broad Energy Germanium (BEGe) type High Purity Germanium (HPGe) detector, with a carbon fiber entrance window thickness of 0.6 mm and an active area of 6305 mm2, operated at shallow depth (~…
The diffusion and activation of $n$-type impurities (P and As) implanted into $p$-type Ge(100) substrates were examined under various dose and annealing conditions. The secondary ion mass spectrometry profiles of chemical concentrations…
The recent discovery of high thermoelectric performance in Mg$_3$Sb$_2$ has been critically enabled by the success in $n$-type doping of this material, which is achieved under Mg-rich growth conditions, typically with chalcogens (Se, Te) as…
High-purity germanium (HPGe) detectors are widely used for the measurement of the low concentrated radioactivities. For the Super-Kamiokande-Gadolinium project, the concentration of radium in Gd$_2$(SO$_4$)$_3{\cdot}$8H$_2$O is determined…
High-purity germanium (HPGe) detectors used for low-background gamma ray spectrometry are usually operated under either a fairly low overburden of the order of one meter of water equivalent (mw.e.) or a high overburden of the order of…
The superconducting properties of polycrystalline Sr0.6K0.4Fe2As2 were strongly influenced by Ag doping (Supercond. Sci. Technol. 23 (2010) 025027). Ag addition is mainly dominated by silver diffusing, so the annealing process is one of the…
In contrast to monolayer graphene, in bilayer graphene (BLG) one can induce a tunable bandgap by applying an external electric field, which makes it suitable for field effect applications. Extrinsic doping of BLGs enriches the electronic…
The hot-wall metal-organic chemical vapor deposition (MOCVD), previously shown to enable superior III-nitride material quality and high performance devices, has been explored for Mg doping of GaN. We have investigated the Mg incorporation…
High Purity germanium point-contact detectors have low energy thresholds and excellent energy resolution over a wide energy range, and are thus widely used in nuclear and particle physics. In rare event searches, such as neutrinoless double…
Germanium-Tin (GeSn) alloys have emerged as a promising material for future optoelectronics, energy harvesting and nanoelectronics owing to their direct bandgap and compatibility with existing Si-based electronics. Yet, their metastability…
High-purity germanium detectors are well suited to analysis the radioactivity of samples. In order to reduce the environmental background, low-activity lead and oxygen free copper are installed outside of the probe to shield gammas, outmost…
We describe a new high-purity germanium (HPGe) detector setup for low-background {\gamma}-ray spectrometry. The GeMSE facility (Germanium Material and meteorite Screening Experiment) is dedicated to material screening for rare event…