Related papers: Characterization and modeling of thermally-induced…
Solar-driven water electrolysis requires high-performance photoelectrodes that exhibit excellent photoabsorption, superior charge transport, and optimized thermal management. In this work, we conducted a first-principles investigation to…
The thermodynamic, kinetic and magnetic properties of the hydrogen monomer on doped graphene layers were studied by ab initio simulations. Electron doping was found to heighten the diffusion potential barrier, while hole doping lowers it.…
We report the first empirical efficiency measurement of germanium-based thermophotovoltaic devices under high-temperature, high-irradiance conditions using a high view-factor calorimetric setup. Two TPV cell architectures were fabricated on…
In spite of having higher carrier mobilities and absorption coefficients of germanium (Ge) than those of silicon (Si), there has been less focus on Ge-based solar cells due to the low bandgap and high-cost of Ge wafer as well as requirement…
In this study, the impurity concentration and magnetic response of nine highly oriented pyrolytic graphite (HOPG) samples with different grades and from different providers were determined using ion beam microscopy and SQUID magnetometry.…
Rare-event experiments such as LEGEND-1000 require high-purity germanium (HPGe) detectors with excellent energy resolution, low electronic noise, and scalable low-background packaging. The germanium ring-contact (GeRC) concept addresses…
We report the effect of germanium as n-type dopant on the electrical and optical properties of AlxGa1-xN layers grown by plasma assisted molecular-beam epitaxy. The Al content has been varied from x = 0 to 0.66, confirmed by Rutherford…
Explosive crystallization (EC) is often observed when using nanosecond-pulsed melt laser annealing (MLA) in amorphous silicon (Si) and germanium (Ge). The solidification velocity in EC is so fast that a diffusion-less crystallization can be…
High thermoelectric energy conversion efficiency requires a large figure-of-merit, zT, over a broad temperature range. To achieve this, we optimize the carrier concentrations of n-type PbTe from room up to hot-end temperatures by co-doping…
The p-type point-contact germanium (pPCGe) detectors have been widely adopted in searches for low energy physics events such as neutrinos and dark matter. This is due to their enhanced capabilities of background rejection, sensitivity at…
We report the effect of co-doping of In and Ga at low concentrations on the structural, electronic, and thermoelectric properties of SnTe based compositions $Sn_{1.03-2x}In_{x}Ga_{x}Te$ (x = 0, 0.01, 0.02, 0.04) prepared by the solid-state…
Quantum anomalous Hall effect (QAHE) has been experimentally observed in magnetically doped topological insulators. However, ultra-low temperature (usually below 300 mK), which is mainly attributed to inhomogeneous magnetic doping, becomes…
High-purity germanium (HPGe) crystals underpin some of the most sensitive detectors used in fundamental physics and other high-resolution radiation-sensing applications. Despite their importance, the supply of detector-grade HPGe remains…
We present a theoretical investigation of high-harmonic generation (HHG) from impurity-doped materials using the time-dependent Schr\"odinger equation (TDSE) approach. We demonstrate the factorization of HHG yields as a product of an…
Extending chip performance beyond current limits of miniaturisation requires new materials and functionalities that integrate well with the silicon platform. Germanium fits these requirements and has been proposed as a high-mobility channel…
We perform a phenomenological analysis of the problem of the electronic doping of a graphene sheet by deposited transition metal atoms, which aggregate in clusters. The sample is placed in a capacitor device such that the electronic doping…
High Purity Germanium (HPGe) detectors are powerful detectors for gamma-ray spectroscopy. The sensitivity to low-intensity gamma-ray peaks is often hindered by the presence of Compton continuum distributions, originated by gamma-rays…
Phase change materials based on Ge-Sb-Te alloys are widely explored for their potential in both memory devices and thermoelectric applications. In this study, films of Ge2Sb2Te5 (GST) doped with varying concentrations of Pb were prepared…
Phosphorus (P) in germanium (Ge) delta-doped layers are fabricated in ultra-high vacuum by adsorption of phosphine molecules onto an atomically flat clean Ge(001) surface followed by thermal incorporation of P into the lattice and epitaxial…
``Oversimplified'' and ``simplified'' methods based on true coincidence summing effect used in uncomplicated determination of the photo-peak efficiency of the semiconductor High Purity Germanium (HPGe) detector system are suggested and…