Related papers: Ultrawide Band Gap \beta-Ga2O3 Nanomechanical Reso…
The ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates make \b{eta}-Ga2O3 promising for applications of next-generation power electronics while its thermal conductivity is at least one order of magnitude…
Gallium selenide (GaSe) is a 2D material with a thickness-dependent gap, strong non-linear optical coefficients and uncommon interband optical selection rules, making it interesting for optoelectronic and spintronic applications. In this…
As electricity grids become more renewable energy-compliant, there will be a need for novel semiconductors that can withstand high power, high voltage, and high temperatures. Wide band gap (WBG) semiconductors tend to exhibit large…
We report the synthesis of alpha-Fe1.4Ga0.6O3 compound and present its structural phase stability and interesting magnetic, dielectric and photo-absorption properties. In our work Ga doped alpha-Fe2O3 samples are well stabilized in alpha…
Bi2Se3 is a prototypical topological insulator which has a small band gap (~0.3 eV) and topologically protected conducting surface states. This material exhibits quite strong thermoelectric effects. Here we show in a mechanically exfoliated…
Highly luminescent ZnO:Na nanocrystals of size ~2 nm were synthesized using a improved sol-lyophilization process. The surface analysis such as survey scan, core-level and valence band spectra of ZnO:Na nanocrystals were studied using x-ray…
Rutile germanium dioxide (r-GeO$_2$) is a promising ultra-wide bandgap (UWBG) semiconductor, offering a high theoretical Baliga figure of merit, potential for p-type doping, and favorable thermal and electrical properties. In this work, we…
We present a structurally simple yet functionally ver- satile reflective meta-array composed of phase-change Antimony trisulfide (Sb2S3) nanorods enabling broad- band and wide-angle beam deflection in near-infrared. The device achieves over…
Applications of cavity optomechanics span from gravitational wave detection to the study of quantum motion states in mesoscopic mechanical systems. The engineering of resonators supporting strongly interacting mechanical and optical modes…
All-dielectric optical nano-resonators, exhibiting exotic near-field distributions upon excitations, have emerged as low-loss, versatile and highly adaptable components in nanophotonic structures for manipulating electromagnetic waves and…
Gallium selenide (GaSe) is a novel two-dimensional material, which belongs to the layered III-VIA semiconductors family and attracted interest recently as it displays single-photon emitters at room temperature and strong optical…
In this paper, a transient delayed rising and fall time of $\beta$-Ga$_2$O$_3$ NMs Schottky barrier diodes (SBDs) formed on four different substrates (diamond, Si, sapphire, and polyimide) were measured using a sub-micron second resolution…
The recent observation of superconducting state at atomic scale has motivated the pursuit of exotic condensed phases in two-dimensional (2D) systems. Here we report on a superconducting phase in two-monolayer crystalline Ga films…
Nonlinear optical phenomena in nanostructured materials have been challenging our perceptions of nonlinear optical processes that have been explored since the invention of lasers. For example, the ability to control optical field…
Ga$_2$O$_3$ and (Al$_x$Ga$_{1-x}$)$_2$O$_3$ alloys are promising materials for solar-blind UV photodetectors and high-power transistors. Basic key parameters in the device design, such as band gap variation with alloy composition and band…
There are some issues with traditional whispering gallery mode (WGM) resonators like poor light extraction and a dense mode spectrum. In this paper we introduce a solution to these limitations by proposing open WGM (OWGM) resonators that…
The functionalities of a wide range of optical and opto-electronic devices are based on resonance effects and active tuning of the amplitude and wavelength response is often essential. Plasmonic nanostructures are an efficient way to create…
GaN is a wide-bandgap semiconductor used in high-efficiency LEDs and solar cells. The solid is produced industrially at high chemical purities by deposition from a vapour phase, and oxygen may be included at this stage. Oxidation represents…
Ultra-wide bandgap (UWBG) semiconductors promise to revolutionize power electronics, yet a fundamental understanding of their interfacial electronic structure has been hindered by the absence of direct experimental observation. Here, we…
We report a method to obtain insights into lower thermal conductivity of \beta-Ga2O3 thin films grown by molecular beam epitaxy (MBE) on c-plane sapphire and 4H-SiC substrates. We compare experimental values against the numerical…