Related papers: Ultrawide Band Gap \beta-Ga2O3 Nanomechanical Reso…
We introduce a nanomechanical platform for fast and sensitive measurements of the spectrally-resolved optical dielectric function of 2D materials. At the heart of our approach is a suspended 2D material integrated into a nanomechanical…
Miniaturized, low-cost wavelength detectors are gaining enormous interest as we step into the new age of photonics. Incompatibility with integrated circuits or complex fabrication requirement in most of the conventionally used filters…
Precise control of the conductivity of semiconductors through doping has enabled the creation of advanced electronic devices, similarly, the ability to control the conductivity in oxides can enable novel advanced electronic and…
We provide theoretical consideration of intersubband transitions designed in the ultrawide bandgap Aluminum Gallium Oxide ((AlxGa1-x)2O3)/Gallium Oxide (Ga2O3)) quantum well system. Conventional material systems have matured into successful…
A hybrid device comprising a (Al)GaAs quantum dot heterostructure and a LiNbO$_3$ surface acoustic wave resonator is fabricated by heterointegration. High acoustic quality factors $Q>4000$ are demonstrated for an operation frequency…
We present the first observation of optomechanical coupling in ultra-high Q crystalline whispering-gallery-mode (WGM) resonators. The high purity of the crystalline material enables optical quality factors in excess of 10^{10} and finesse…
Two-dimensional (2D) carbon-based materials have attracted considerable interest due to their diverse structural and electronic properties, making them ideal for next-generation flat electronics. Among these materials, metallic-like porous…
The analogy between mechanical and electromagnetic resonators has been a celebrated paradigm of science and engineering. Exploration of this analogy in recent years has resulted in several exciting research directions, including cavity…
Solid-phase epitaxy (SPE) of beta-Ga2O3 thin films by radio-frequency (RF) sputtering and then crystallized through high-temperature post-deposition annealing is employed on sapphire substrates, yielding a high-quality pseudo-substrate for…
$\beta$-$\mathrm{Ga}_{2}\mathrm{O}_{3}$ has gained intensive interests of research and application as an ultrawide bandgap semiconductor. Epitaxial growth technique of the $\beta$-$\mathrm{Ga}_{2}\mathrm{O}_{3}$ thin film possesses a…
We report on a new class of magnetoresistance oscillations observed in a high-mobility two-dimensional electron gas (2DEG) in GaAs-Al$_x$Ga$_{1-x}$As heterostructures. Appearing in a weak magnetic field ($B<$ 0.3 T) and only in a narrow…
We present a new approach to dielectric metasurface design that relies on a single resonator per unit cell and produces robust, high quality-factor Fano resonances. Our approach utilizes symmetry breaking of highly symmetric resonator…
The performance of ultra-wide band gap materials like $\beta$-Ga$_\mathrm{2}$O$_\mathrm{3}$ is critically dependent on achieving high average electric fields within the active region of the device. In this report, we show that high-k gate…
We report Beta-AlGaO/Ga2O3 tri-gate heterostructure MOSHEMTs incorporating a thin 5 nm Al2O3 gate oxide layer for improved gate control and reduced leakage. The devices were fabricated on AlGaO/GaO heterostructures grown by ozone MBE on…
Solid heterostructures composed of substrates and epitaxial films are extensively used in advanced technologies, and their thermophysical properties fundamentally determine the performance, efficiency, reliability, and lifetime of the…
We propose deep-subwavelength optical waveguides based on metal-dielectric multilayer indefinite metamaterials with ultrahigh effective refractive indices. Waveguide modes with different mode orders are systematically analyzed with…
In nanomechanical photothermal absorption spectroscopy and microscopy, the measured substance becomes a part of the detection system itself, inducing a nanomechanical resonance frequency shift upon thermal relaxation. Suspended,…
Eu(TTA)3 complexes are used as an emission source in the presence of high refractive index dielectric nanostructures. These nanostructures support Mie-type resonances that modify the local density of optical states. Specifically, the…
In this letter, we report on high performance depletion/enhancement (D/E)-mode beta-Ga2O3 on insulator (GOOI) field-effect transistors (FETs) with record high drain currents (ID) of 600/450 mA/mm, which are nearly one order of magnitude…
Utilizing tantalum (Ta) in superconducting circuits has led to significant improvements, such as high qubit lifetimes and quality factors in both qubits and resonators, underscoring the importance of material optimization in quantum device…