Related papers: A tunnel FET compact model including non-idealitie…
Recently, short channel effects (SCE) and power consumption dissipation problems pose big challenges which need imperative actions to be taken to deal with for field effect transistor to further scale down as semiconductor technology enters…
In this work, we investigate the transport phenomena in compound semiconductor material based buried channel Quantum Well MOSFET with a view to developing a simple and effective model for the device current. Device simulation has been…
We present the design of a new type of compact toroidal, or "halo", ion trap. Such traps may be useful for mass spectrometry, studying small Coulomb cluster rings, quantum information applications, or other quantum simulations where a ring…
We show that interlayer current induces topological superconductivity in twisted bilayers of nodal superconductors. A bulk gap opens and achieves its maximum near a ``magic'' twist angle $\theta_\mathrm{MA}$. Chiral edge modes lead to a…
Tunnel ionization (TI) underlies many important ultrafast processes, such as high-harmonic generation and strong-field ionization. Among the existing theories for TI, many-electron weak-field asymptotic theory (ME-WFAT) is by design capable…
The performance of n-type amorphous oxide semiconductor thin-film transistors (TFTs) is largely controlled by the density of states (DoS) near the conduction band mobility edge. Here, the full subgap DoS of amorphous InGaZnO (a-IGZO) TFTs,…
The dependence of random telegraph noise (RTN) amplitude on the gate overdrive in a junctionless field-effect transistor (FinFET) with rectangular and trapezoidal channel (fin) cross sections manufactured using silicon-on-insulator…
Spin field-effect transistors (SFETs) are promising candidates for low-power spin-based electronics, yet existing realizations that rely on spin-orbit coupling are constrained by limited material choices and short spin-coherence lengths.…
Time-frequency analysis (TFA) techniques play an important role in the field of machine fault diagnosis attributing to their superiority in dealing with nonstationary signals. Synchroextracting transform (SET) and transient-extracting…
Time Projection Chamber (TPC) is one of the main tracking systems for many current and future collider experiments at RHIC and LHC. It has a capability to measure the space points of charged tracks for good momentum resolution as well as…
The choice of electrostatic gating over the conventional chemical doping for phase engineering of quantum materials is attributed to the fact that the former can reversibly tune the carrier density without affecting the system's level of…
We theoretically propose and experimentally demonstrate a parallel-electromagnetically-induced transparency (parallel-EIT) cooling technique for ion crystals in the Paul trap. It has less stringent requirements on the cooling resonance…
In this paper we study the device physics of a technique for realizing an n-p-n bipolar transistor action in the source side of a junctionless nanowire tunneling FET (BJN-TFET). In the on-state, tunneling of electrons from valence band of…
A transfer matrix technique is used to model phase coherent spin transport in the weakly disordered quasi one-dimensional channel of a gate-controlled electron spin interferometer [Datta and Das, Appl. Phys. Lett., 56, 665 (1990)]. It…
Cryogenic field-effect transistors (FETs) offer great potential for a wide range of applications, the most notable example being classical control electronics for quantum information processors. In the latter context, on-chip FETs with low…
We theoretically investigate the spin injection in different FM/I/n-Si tunnel contacts by using the lattice NEGF method. We find that the tunnel contacts with low barrier materials such as TiO$_2$ and Ta$_{2}$O$_{5}$, have much lower…
In vanadium dioxide, the interplay between coherent lattice transformation and electronic correlation drives an insulator-to-metal transition (IMT). This phase commutation can be triggered by temperature, pressure, doping or deposition of…
Full-band atomistic quantum transport simulations based on first principles are employed to assess the potential of band-to-band tunneling FETs (TFETs) with a 2-D channel material as future electronic circuit components. We demonstrate that…
A common issue in low temperature measurements of enhancement-mode metal-oxide-semiconductor (MOS) field-effect transistors (FETs) in the low electron density regime is the high contact resistance dominating the device impedance. In that…
Clockwise to anti-clockwise hysteresis crossover in current-voltage transfer characteristics of field effect transistors (FETs) with graphene and MoS$_2$ channels holds significant promise for non-volatile memory applications. However such…