Related papers: A tunnel FET compact model including non-idealitie…
An InAlN/GaN HEMT device was studied using extensive temperature dependent DC IV measurements and CV measurements. Barrier traps in the InAlN layer were characterized using transient analysis. Forward gate current was modelled using…
In the last 60 years conventional solid and electrolyte gating allowed sizable modulations of the surface carrier concentration in metallic superconductors resulting in tuning their conductivity and changing their critical temperature.…
In recent part extensive simulation work has already been done on TFETs. However this is limited to device performance analysis. Evaluation of circuit performance is a topic that is very little touched. This is due to the non availability…
In recent past extensive device simulation work has already been done on TFETs. Various ways have been suggested to model TFETs. In our paper we look at one such particular way to model these devices. The Non equilibrium green's formalism…
Spin transistors (whose on-off operation is achieved by electric-field-controlled spin orientation 1), if realized, can revolutionize modern electronics through the implementation of a faster and a more energy-efficient performance as well…
Novel devices such as tunneling field-effect transistors (FETs) and ferroelectric FETs have been demonstrated to break the subthreshold swing (SS) limit with sub-60 mV/decade switching for further low voltage/low power applications. In this…
We demonstrate a mechanism for a dual layer, vertical field-effect transistor, in which nearly-depleting one layer will extend its wavefunction to overlap the other layer and increase tunnel current. We characterize this effect in a…
GaSb/InAs heterojunction tunnel field-effect transistors are strong candidates in building future low-power integrated circuits, as they could provide both steep subthreshold swing and large ON-state current ($I_{\rm{ON}}$). However, at…
Asymmetric superconducting tunnel junctions with gaps $\Delta_1>\Delta_2$ have been proven to show a peculiar nonlinear bipolar thermoelectric effect. This arises due to the spontaneous breaking of electron-hole symmetry in the system, and…
Three-dimensional topological insulators are characterized by the presence of a bandgap in their bulk and gapless Dirac fermions at their surfaces. New physical phenomena originating from the presence of the Dirac fermions are predicted to…
The epsilon-near-zero (ENZ) tunneling phenomenon allows full transmission of waves through a narrow channel even in the presence of a strong geometric mismatch. Here we experimentally demonstrate nonlinear control of the ENZ tunneling by an…
Electrostatically-defined semiconductor quantum dot arrays offer a promising platform for quantum computation and quantum simulation. However, crosstalk of gate voltages to dot potentials and inter-dot tunnel couplings complicates the…
We study the thermoelectric properties of three-dimensional topological insulators in magnetic fields with many holes (or pores) in the bulk. We find that at high density of these holes in the transport direction the thermoelectric figure…
A high performance triple-heterojunction (3HJ) design has been previously proposed for tunneling FETs (TFETs). Compared with single heterojunction (HJ) TFETs, the 3HJ TFETs have both shorter tunneling distance and two transmission…
Long-range moire patterns in twisted WSe2 enable a built-in, moire-length-scale ferroelectric polarization that can be directly harnessed in electronic devices. Such a built-in ferroic landscape offers a compelling means to enable…
Topological insulators (TIs) have been considered as promising candidates for next generation of electronic devices due to their topologically protected quantum transport phenomena. In this work, a scheme for atomic-scale field effect…
In the present work, we have investigated ballistic quantum transport in vertical halo implanted p plus minus GaSb InAs n TFETs. We have investigated the current voltage characteristics, ON current, OFF current leakage, subthreshold swing…
Nano-membrane tri-gate beta-gallium oxide (\b{eta}-Ga2O3) field-effect transistors (FETs) on SiO2/Si substrate fabricated via exfoliation have been demonstrated for the first time. By employing electron beam lithography, the minimum-sized…
The Toffoli gate is a fundamental building block for quantum arithmetic and reversible logic, yet its efficient realization remains a major challenge in both near-term and fault-tolerant quantum architectures. Recent advances in dynamic…
Using a tight-binding mode-space NEGF technique, we explore the essential physics, design and performance potential of the III-V core-shell (CS) nanowire (NW) heterojunction TFET. The CS TFET line-tunneling current increases significantly…