Related papers: Spin and valley manipulation in single and double …
Spin qubits hosted in silicon (Si) quantum dots (QD) are attractive due to their exceptionally long coherence times and compatibility with the silicon transistor platform. To achieve electrical control of spins for qubit scalability, recent…
We theoretically describe the spin excitation spectrum of a two dimensional electron gas embedded in a quantum well with localized magnetic impurities. Compared to the previous work, we introduce equations that allow to consider the…
We theoretically explore the possibility of creating spin quantum entanglement in a system of two electrons confined respectively in two vertically coupled quantum dots in the presence of Rashba type spin-orbit coupling. We find that the…
We study three-electron energy spectra in Si/SiGe single and vertically coupled double quantum dots where all the relevant effects, such as, the Zeeman splitting, spin-orbit coupling, valley coupling and electron-electron Coulomb…
We determine the spin exchange coupling J between two electrons located in two vertically tunnel-coupled quantum dots, and its variation when magnetic (B) and electric (E) fields (both in-plane and perpendicular) are applied. We predict a…
The electronic properties of the novel two dimensional (2D) material silicene are strongly influenced by the application of a perpendicular electric field $E_z$ and of an exchange field $M$ due to adatoms positioned on the surface or a…
We show that inversion symmetry breaking together with spin-orbit coupling leads to coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides, making possible controls of spin and valley in these 2D materials.…
Exchange-coupled singlet-triplet spin qubits in two gate-defined double quantum dots are considered theoretically. Using charge density operators to describe the double-dot orbital states, we calculate the Coulomb couplings between the…
Dynamical buildup of spin-singlet correlations between the two quantum dots is investigated by means of the time-dependent numerical renormalization group method. By calculating the timeevolution of the spin-spin expectation value upon a…
With silicon being the go-to material for spin qubits, and motivated by the demand of a scalable quantum computer architecture for fast and reliable quantum information transfer on-chip, we study coherent electron transport in a silicon…
We perform a systematic exact diagonalization study of spin-orbit coupling effects for stationary few-electron states confined in quasi two-dimensional double quantum dots. We describe the spin-orbit-interaction induced coupling between…
Although silicon is a promising material for quantum computation, the degeneracy of the conduction band minima (valleys) must be lifted with a splitting sufficient to ensure formation of well-defined and long-lived spin qubits. Here we…
Interactions between electrons can strongly affect the shape and functionality of multi-electron quantum dots. The resulting charge distributions can be localized, as in the case of Wigner molecules, with consequences for the energy…
Electronic states in silicon quantum dots are examined theoretically, taking into account a multivalley structure of the conduction band. We find that (i) exchange interaction hardly works between electrons in different valleys. In…
Spin-orbit effects on electron-electron interaction are studied theoretically. The corrections to the Coulomb interaction of quantum well electrons induced by the spin-orbit coupling are derived. The developed theory is applied to calculate…
We fabricated Quantum Dot (QD) devices using a standard SOI CMOS process flow, and demonstrated that the spin of confined electrons could be controlled via a local electrical-field excitation, owing to inter-valley spin-orbit coupling. We…
The intrinsic spin and valley Hall conductivities of silicene, germanene and other similar two dimensional crystals are explored theoretically. Particular attention is given to the effects of the intrinsic spin-orbit coupling, electron…
We define single electron spin qubits in a silicon MOS double quantum dot system. By mapping the qubit resonance frequency as a function of gate-induced electric field, the spectrum reveals an anticrossing that is consistent with an…
We describe dynamics of spin and valley transitions driven by alternating electric fields in quantum dots defined electrostatically within semiconducting carbon nanotubes (CNT). We use the tight-binding approach to describe the states…
Spin dynamics of optically excited electrons confined in asymmetric coupled quantum wells are investigated through time resolved Faraday rotation experiments. The inter-well coupling is shown to depend on applied electric field and barrier…