Related papers: Spin and valley manipulation in single and double …
We present a theoretical study of the Pauli or spin-valley blockade for double quantum dots in semiconducting carbon nanotubes. In our model we take into account the following characteristic features of carbon nanotubes: (i) fourfold (spin…
The energies of valley-orbit states in silicon quantum dots are determined by an as yet poorly understood interplay between interface roughness, orbital confinement, and electron interactions. Here, we report measurements of one- and…
A gate electric field has a small but non-negligible effect on the phase of the valley-orbit coupling in Si quantum dots. Finite interdot tunneling between valley eigenstates in a double quantum dot is enabled by a small difference in the…
We investigate the singlet-triplet relaxation due to the spin-orbit coupling together with the electron-phonon scattering in two-electron multivalley silicon single quantum dots, using the exact diagonalization method and the Fermi golden…
We present a theoretical realization of quantum spin and quantum valley Hall effects in silicene. We show that combination of an electric field and intrinsic spin-orbit interaction leads to quantum phase transitions at the charge neutrality…
We model a spin-phase transition in a two-dimensional square array, or a lateral superlattice, of quantum rings in an external perpendicular homogeneous magnetic field. The electron system is placed in a circular cylindrical far-infrared…
Understanding how the electron spin is coupled to orbital degrees of freedom, such as a valley degree of freedom in solid-state systems is central to applications in spin-based electronics and quantum computation. Recent developments in the…
The spin states of electrons confined in semiconductor quantum dots form a promising platform for quantum computation. Recent studies of silicon CMOS qubits have shown coherent manipulation of electron spin states with extremely high…
The role of spin is investigated in the transport through a quantum dot with two overlapping resonances (one having a width larger than the level separation and the other very narrow, cf. Silvestrov and Imry, Phys. Rev. Lett. {\bf 85}, 2565…
We study the spin-dependent electronic transport through a one-dimensional ballistic quantum wire in the presence of Rashba spin-orbit interaction. In particular, we consider the effect of the spin-orbit interaction resulting from the…
We develop a theory of inter-valley Coulomb scattering in semiconducting carbon-nanotube quantum dots, taking into account the effects of curvature and chirality. Starting from the effective-mass description of single-particle states, we…
We study exchange coupling in Si double quantum dots, which have been proposed as suitable candidates for spin qubits due to their long spin coherence times. We discuss in detail two alternative schemes which have been proposed for…
We study the pseudospin and spin dynamical effects in single-layer silicene due to a perpendicular electric field periodically driven and its interplay with the intrinsic and extrinsic (Rashba) spin-orbit interaction. We find that the spin…
Spin-orbit effects, inherent to electrons confined in quantum dots at a silicon heterointerface, provide a means to control electron spin qubits without the added complexity of on-chip, nanofabricated micromagnets or nearby coplanar…
We explore a two-qubit system defined on valley isospins of two electrons confined in a gate-defined double quantum dot created within a MoS$_2$ monolayer flake. We show how to initialize, control, interact and read out such valley qubits…
We review recent theoretical results for hole spins influenced by spin-orbit coupling and Coulomb interaction in two-dimensional quantum wells as well as the decoherence of single hole spins in quantum dots due to hyperfine interaction with…
Spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field the quantum well can be tuned between a single carrier regime with exclusively electrons as carriers and a two-carriers regime where…
Electrons confined in silicon quantum dots exhibit orbital, spin, and valley degrees of freedom. The valley degree of freedom originates from the bulk bandstructure of silicon, which has six degenerate electronic minima. The degeneracy can…
Silicene consists of a monolayer of silicon atoms in a buckled honeycomb structure. It was recently discovered that the symmetry of such a system allows for interesting Rashba spin-orbit effects. A perpendicular electric field is able to…
We study the energy spectrum of symmetric double quantum dots in narrow-gap carbon nanotubes with one and two electrostatically confined electrons in the presence of spin-orbit and Coulomb interactions. Compared to GaAs quantum dots, the…