Related papers: Strong Proton-Defect Interaction in Synergistic Ir…
The synergistic effects of neutron and gamma ray radiated PNP transistors are systematically investigated as functions of the neutron fluence, gamma ray dose, and dose rate. We find that the damages show a `tick'-like dependence on the…
The total ionizing dose irradiation (TID) effects of partially depleted (PD) silicon-on-insulator (SOI)devices which fabricated with a commercial 0.2 um SOI process are investigated. Experimental results show an original phenomenon that the…
The total ionizing radiation (TID) response of commercial NPN silicon germanium hetero-junction bipolar transistors (SiGe HBTs) produced domestic were investigated under the dose rate of 800mGy(Si)/s and 1.3mGy(Si)/s with Co-60 gamma…
The practical damage of silicon bipolar devices subjected to mixed ionization and displacement irradiations is usually evaluated by the sum of separated ionization and displacement damages. However, recent experiments show clear difference…
The concentration of primary radiation induced defects has been previously estimated considering both the explicit mechanisms of the primary interaction between the incoming particle and the nuclei of the semiconductor lattice, and the…
Irradiation damage is a key physics issue for semiconductor devices under extreme environments. For decades, the ionization-irradiation-induced damage in transistors with silica-silicon structures under constant dose rate is modeled by a…
Radiation damage tests in hydrogenated amorphous silicon (a-Si:H) flexible flux and dose-measuring devices have been performed with a 3 MeV proton beam, to evaluate combined displacement and total ionizing dose damage. The tested devices…
Based on the parameters from published ab-inito theoretical and experimental studies, and combining Molecular Dynamics (MD) and kinetic Monte Carlo (KMC) simulations, a framework of multi-scale modeling is developed to investigate the…
In this article, we investigate the role of the self-interaction error in the simulation of collisions using time-dependent density functional theory (TDDFT) and Ehrenfest dynamics. We compare many different approximations of the exchange…
We are developing double silicon-on-insulator (DSOI) pixel sensors for various applications such as for high-energy experiments. The performance of DSOI devices has been evaluated including total ionization damage (TID) effect compensation…
Density functional theory calculations for the electronic structures of the 4H-SiC(0001)/SiO$_2$ interface with atomic-scale steps are carried out to investigate the effect of NO annealing. The characteristic behavior of the conduction band…
A study of the temperature (T) and density (n_s) dependence of conductivity \sigma(n_s,T) of a highly disordered, two-dimensional (2D) electron system in Si demonstrates scaling behavior consistent with the existence of a metal-insulator…
In this contribution, the correlation between fundamental interaction processes induced by radiation in silicon and observable effects which limit the use of silicon detectors in high energy physics experiments is investigated in the frame…
Using the nucleon coalescence model, which can naturally take into account the correlations in the nucleon density distribution, we study the effects of QCD critical point on light nuclei production in relativistic heavy-ion collisions. We…
We are investigating adaption of SOI pixel devices for future high energy physic(HEP) experiments. The pixel sensors are required to be operational in very severe radiation environment. Most challenging issue in the adoption is the TID…
We are developing monolithic pixel detectors based on SOI technology for high energy physics, X-ray applications and so on.To employ SOI pixel detector on such radiation environments, we have to solve effects of total ionizing dose (TID)…
Neutron bombardments with equivalent fluence (1$\times$10$^{10}$ cm$^{-2}$) and different fluxes ($2.5\times$10$^5$ cm$^{-2}$s$^{-1}$ to $1\times$10$^7$ cm$^{-2}$s$^{-1}$) have been performed on three kinds of bipolar devices with n-type…
A theory describing above-threshold ionization of atoms and ions in a strong electromagnetic field is presented. It is based on the widely known strong field approximation and incorporates the Coulomb interaction between the photoelectron…
This study experimentally examines the effect and changes in the delivered fields, using water-equivalent phantoms with and without titanium (Ti) dental implants positioned along the primary beam path. We measure in detail the composition…
The ATLAS Inner Tracker (ITk) upgrade for the High-Luminosity LHC (HL-LHC) requires a radiation-tolerant pixel readout chip, which must withstand a total ionising dose (TID) of up to 1 Grad. The readout ASIC for the ITk upgrade has been…