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Related papers: Gate-Defined Quantum Confinement in InSe-based van…

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In the last six years, Indium selenide (InSe) has appeared as a new van der Waals heterostructure platform which has been extensively studied due to its unique electronic and optical properties. Such as transition metal dichalcogenides…

As silicon-based computing approaches fundamental physical limits in energy efficiency, speed, and density, the search for complementary materials to extend or replace CMOS technology has become increasingly urgent. While two-dimensional…

Materials Science · Physics 2026-02-05 Seunguk Song , Michael Altvater , Wonchan Lee , Hyeon Suk Shin , Nicholas Glavin , Deep Jariwala

Atomically thin, two-dimensional (2D) indium selenide (InSe) has attracted considerable attention due to large tunability in the band gap (from 1.4 to 2.6 eV) and high carrier mobility. The intriguingly high dependence of band gap on layer…

Materials Science · Physics 2018-03-28 Yuanhui Sun , Shulin Luo , Xin-Gang Zhao , Koushik Biswas , Song-Lin Li , Lijun Zhang

Two-dimensional layered materials, such as transition metal dichalcogenides (TMDCs), are promising materials for future electronics owing to their unique electronic properties. With the presence of a band gap, atomically thin gate defined…

Mesoscale and Nanoscale Physics · Physics 2015-10-28 Xiang-Xiang Song , Di Liu , Vahid Mosallanejad , Jie You , Tian-Yi Han , Dian-Teng Chen , Hai-Ou Li , Gang Cao , Ming Xiao , Guang-Can Guo , Guo-Ping Guo

Quantum confinenement and manipulation of charge carriers are critical for achieving devices practical for quantum technologies. The interplay between electron spin and valley, as well as the possibility to address their quantum states…

Spatial confinement and manipulation of charged carriers in semiconducting nanostructures are essential for realizing quantum electronic devices. Gate-defined nanostructures made of two-dimensional (2D) semiconducting transition metal…

Mesoscale and Nanoscale Physics · Physics 2016-10-11 Ke Wang , Takashi Taniguchi , Kenji Watanabe , Philip Kim

Metal mono-chalcogenide compounds offer a large variety of electronic properties depending on chemical composition, number of layers and stacking-order. Among them, the InSe has attracted much attention due to the promise of outstanding…

The two-dimensional (2D) semiconductor indium selenide (InSe) has attracted significant interest due its unique electronic band structure, high electron mobility and wide tunability of its band gap energy achieved by varying the layer…

Materials Science · Physics 2020-04-29 Yuanhui Sun , Yawen Li , Tianshu Li , Koushik Biswas , Amalia Patanè , Lijun Zhang

Indium antimonide (InSb) two-dimensional electron gases (2DEGs) have a unique combination of material properties: high electron mobility, strong spin-orbit interaction, large Land\'{e} g-factor, and small effective mass. This makes them an…

The prospect of coupling a two-dimensional (2D) semiconductor heterostructure to a superconductor opens new research and technology opportunities, including fundamental problems in mesoscopic superconductivity, scalable superconducting…

Nano-structuring is an extremely promising path to high performance thermoelectrics. Favorable improvements in thermal conductivity are attainable in many material systems, and theoretical work points to large improvements in electronic…

Two-dimensional flat-band systems have recently attracted considerable interest due to the rich physics unveiled by emergent phenomena and correlated electronic states at van Hove singularities. However, the difficulties in electrically…

Two-dimensional semiconductors - atomic layers of materials with covalent intra-layer bonding and weak (van der Waals or quadrupole) coupling between the layers - are a new class of materials with great potential for optoelectronic…

Layered indium selenide (InSe), a new two-dimensional (2D) material with a hexagonal structure and semiconducting characteristic, is gaining increasing attention owing to its intriguing electronic properties. Here, by using first-principles…

Materials Science · Physics 2017-12-19 Andrey A. Kistanov , Yongqing Cai , Kun Zhou , Sergey V. Dmitriev , Yong-Wei Zhang

Two-dimensional (2D) indium selenide (InSe) is a layered semiconductor with high electron mobility and a tunable band gap ranging from 1.25 eV in the bulk to 2.8 eV in the monolayer limit. These properties make these materials strong…

Layered metal chalcogenide materials provide a versatile platform to investigate emergent phenomena and two-dimensional (2D) superconductivity at/near the atomically thin limit. In particular, gate-induced interfacial superconductivity…

Heterostructures of 2D van der Waals semiconductor materials offer a diverse playground for exploring fundamental physics and potential device applications. In InSe/GaSe heterostructures formed by sequential mechanical exfoliation and…

Materials Science · Physics 2020-10-23 Arvind Shankar Kumar , Mingyuan Wang , Yancheng Li , Ryuji Fujita , Xuan P. A. Gao

The demand for low-power devices is on the rise as semiconductor engineering approaches the quantum limit and quantum computing continues to advance. Two-dimensional (2D) superconductors, thanks to their rich physical properties, hold…

InSe is a van der Waals semiconductor in which mechanical flexibility, high electronic mobility, and non-trivial electronic structures converge, making it an attractive platform for both intriguing fundamental studies and promising device…

Materials Science · Physics 2025-11-18 Jacob Svane , Kim-Khuong Huynh , Yong P. Chen , Bo Brummerstedt Iversen

Transition metal dichalcogenides (TMDC) are a rich family of two-dimensional materials displaying a multitude of different quantum ground states. In particular, d$^3$ TMDCs are paradigmatic materials hosting a variety of symmetry broken…

Mesoscale and Nanoscale Physics · Physics 2022-03-10 Somesh Chandra Ganguli , Viliam Vaňo , Shawulienu Kezilebieke , Jose L. Lado , Peter Liljeroth
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