Related papers: Coupled quantum dots in bilayer graphene
Graphene quantum dots provide promising platforms for hosting spin, valley, or spin-valley qubits. Taking advantage of the electrically generated band gap and the ambipolar nature, high-quality quantum dots can be defined in bilayer…
Quantum confined devices that manipulate single electrons in graphene are emerging as attractive candidates for nanoelectronics applications. Previous experiments have employed etched graphene nanostructures, but edge and substrate disorder…
We combine electrostatic and magnetic confinement to define a quantum dot in bilayer graphene. The employed geometry couples $n$-doped reservoirs to a $p$-doped dot. At magnetic field values around $B = 2~$T, Coulomb blockade is observed.…
The electrostatic confinement of massless charge carriers is hampered by Klein tunneling. Circumventing this problem in graphene mainly relies on carving out nanostructures or applying electric displacement fields to open a band gap in…
Due to Klein tunneling, electrostatic confinement of electrons in graphene is not possible. This hinders the use of graphene for quantum dot applications. Only through quasi-bound states with finite lifetime has one achieved to confine…
This is a review on graphene quantum dots and their use as a host for spin qubits. We discuss the advantages but also the challenges to use graphene quantum dots for spin qubits as compared to the more standard materials like GaAs. We start…
We report on a double quantum dot which is formed in a width-modulated etched bilayer graphene nanoribbon. A number of lateral graphene gates enable us to tune the quantum dot energy levels and the tunneling barriers of the device over a…
The tuneability and control of quantum nanostructures in two-dimensional materials offer promising perspectives for their use in future electronics. It is hence necessary to analyze quantum transport in such nanostructures. Material…
We present transport measurements through an electrostatically defined bilayer graphene double quantum dot in the single electron regime. With the help of a back gate, two split gates and two finger gates we are able to control the number…
We present gate-controlled single, double, and triple dot operation in electrostatically gapped bilayer graphene. Thanks to the recent advancements in sample fabrication, which include the encapsulation of bilayer graphene in hexagonal…
We demonstrate theoretically that quantum dots in bilayers of graphene can be realized. A position-dependent doping breaks the equivalence between the upper and lower layer and lifts the degeneracy of the positive and negative momentum…
The rich and electrostatically tunable phase diagram exhibited by moir\'e materials has made them a suitable platform for hosting single material multi-purpose devices. To engineer such devices, understanding electronic transport and…
Bilayer graphene is a nanomaterial that allows for well-defined, separated quantum states to be defined by electrostatic gating and, therefore, provides an attractive platform to construct tunable quantum dots. When a magnetic field…
We present a highly controllable double quantum dot device based on bilayer graphene. Using a device architecture of interdigitated gate fingers, we can control the interdot tunnel coupling between 1 to 4 GHz and the mutual capacitive…
Double-gated graphene devices provide an important platform for understanding electrical and optical properties of graphene. Here we present transport measurements of single layer, bilayer and trilayer graphene devices with suspended top…
Graphene quantum dots (QDs) are intensively studied as platforms for the next generation of quantum electronic devices. Fine tuning of the transport properties in monolayer graphene QDs, in particular with respect to the independent…
Electrostatically confined quantum dots in bilayer graphene have shown potential as building blocks for quantum technologies. To operate the dots, e.g., as qubits, a precise understanding and control of the confined states and their…
We propose a new method to use gapped graphene as barrier to confine electrons in gapless graphene and form a good quantum dot, which can be realized on an oxygen-terminated $SiO_{2}$ substrate partly H-passivated. In particular, we use…
We examine a graphene quantum dot formed by combining an electric and a uniform magnetic field. The electric field creates a smooth quantum well potential while the magnetic field induces an exponential tail to the dot states. The states…
We propose a new system where electron and hole states are electrostatically confined into a quantum ring in bilayer graphene. These structures can be created by tuning the gap of the graphene bilayer using nanostructured gates or by…