Related papers: Channel thickness optimization for ultra thin and …
We report the performance of field-effect transistors (FETs), comprised of mono-layer of recently synthesized layered two-dimensional MoSi2N_4 as channel material, using the first principles quantum transport simulations. The devices'…
Superchannels leverage the flexibility of elastic optical networks and pave the way to higher capacity channels in space division multiplexing (SDM) networks. A superchannel consists of subchannels to which continuous spectral grid slots…
Flux of rigid or soft particles (such as drops, vesicles, red blood cells, etc.) in a channel is a complex function of particle concentration, which depends on the details of induced dissipation and suspension structure due to hydrodynamic…
Multi-bridge channel field effect transistor (MBCFET) provides several advantages over FinFET technology and is an attractive solution for sub-5 nm technology nodes. MBCFET is a natural choice for devices that use semiconducting layered…
Pentagonal PdSe2 is a promising candidate for layered electronic devices, owing to its high air-stability and anisotropic transport properties. Here, we investigate the performance of p-type FET based on PdSe$_2$ mono-layer using…
The maturity of the chemical vapor deposition graphene-based device processing has increased from chip level demonstrations to wafer-scale fabrication in the past few years. Due to this wafer-scale, electrical characterization and analysis…
In this work, the transport of tunnel field-effect transistor (TFET) based on vertically stacked hereto-structures from 2D transition metal dichalcogenide (TMD) materials is investigated by atomistic quantum transport simulations. WTe2-MoS2…
Semiconducting 2D crystals are currently receiving significant attention due to their great potential to be an ultra-thin body for efficient electrostatic modulation which enables to overcome the limitations of silicon technology. Here we…
Triply Periodic Minimal Surface (TPMS) structures are attracting growing attention as promising geometries for next-generation high-performance heat exchangers (HXs), due to their continuous flow paths and high surface-area-to-volume ratio…
Large capacitance enhancement is useful for increasing the gate capacitance of field-effect transistors (FETs) to produce low-energy-consuming devices with improved gate controllability. We report strong capacitance enhancement effects in a…
Transition-metal dichalcogenides (TMDs) are promising for two-dimensional (2D) semiconducting devices and novel phenomena. For 2D applications, their work function, ionization energy, and electron affinity are required as a function of…
We study compressible fluid flow in narrow two-dimensional channels using a novel molecular dynamics simulation method. In the simulation area, an upstream source is maintained at constant density and temperature while a downstream…
A finite electronic band gap is a standard filter in high-throughput screening of materials using density functional theory (DFT). However, because of the systematic underestimation of band gaps in standard DFT approximations, a number of…
Over the past few years, there has been a growing interest in layered transition metal dichalcogenides (TMD) such as molybdenum disulfide (MoS2). Most studies so far have focused on the electronic and optoelectronic properties of…
The miniaturization of electronic devices has led to the prominence, in technological applications, of ultra-thin films with a thickness ranging from a few tens of nanometers to just about 1-2 nanometers. While these materials are still…
We present a three-dimensional simulation study of silicon nanowire double quantum dots (DQDs) with leads at T = 2 K, which extends beyond traditional effective mass or quasi-1D and quasi-2D approaches typically applied to bulk or planar…
In this paper, we investigated the performance of thin-film transistors (TFTs) with different channel configurations including single-active-layer (SAL) Sn-Zn-O (TZO), dual-active-layers (DAL) In-Sn-O (ITO)/TZO, and triple-active-layers…
This paper presents a density-based topology optimization method for designing 3D thin-walled structures with adaptive meshing. Uniform wall thickness is achieved by simultaneously constraining the minimum and maximum feature sizes using…
This letter reports on the design and demonstration of high-performance Beta-Ga2O3 FinFETs utilizing MOCVD-grown Si delta-doped channels to achieve enhanced carrier transport and electrostatic control. A record high sheet charge density of…
As modern electronic devices are increasingly miniaturized and integrated, their performance relies more heavily on effective thermal management. Two-phase cooling methods enhanced by porous surfaces, which capitalize on thin-film…