Related papers: Channel thickness optimization for ultra thin and …
We report a method to obtain insights into lower thermal conductivity of \beta-Ga2O3 thin films grown by molecular beam epitaxy (MBE) on c-plane sapphire and 4H-SiC substrates. We compare experimental values against the numerical…
A quantum-limited amplification chain is a fundamental advantage for any application that may benefit from the detection of very faint signals. Reading out arrays of superconducting detectors (TESs or MKIDs), resonant cavities, or qubits,…
This paper presents a novel finite-element approach for the electromagnetic modeling of superconducting coated conductors. We combine a thin-shell (TS) method to the $H$-$\phi$ formulation to avoid the meshing difficulties related to the…
Two-dimensional (2D) surface of the topological materials is an attractive channel for the electrical conduction reflecting the linearly-dispersive electronic bands. By applying a reliable systematic thickness t dependent measurement of…
A widely used technique to mitigate the gate leakage in the ultra-scaled metal oxide semiconductor field effect transistors (MOSFETs) is the use of high-k dielectrics, which provide the same equivalent oxide thickness (EOT) as $\rm SiO_2$,…
Independent control of carrier density and out-of-plane displacement field is essential for accessing novel phenomena in two-dimensional material heterostructures. While this is achieved with independent top and bottom metallic gate…
Buried-channel semiconductor heterostructures are an archetype material platform to fabricate gated semiconductor quantum devices. Sharp confinement potential is obtained by positioning the channel near the surface, however nearby surface…
To optimize the bulk-insulating behavior in the topological insulator materials having the tetradymite structure, we have synthesized and characterized single-crystal samples of Bi_(2-x)Sb_(x)Te_(3-y)Se_(y) (BSTS) solid solution at various…
This work examines the influence of thickness on the electrical transport properties of mechanically exfoliated two-dimensional SnSe$_2$ nanosheets, derived from the bulk single crystal. Contrary to conventional trend observed in…
The study of thin films and 2D materials, including transition metal dichalcogenides such as WSe$_2$ offers opportunities to leverage their properties in advanced sensors, quantum technologies, and device to optimize functional performance.…
InSb is one of the promising candidates to realize a topological state through proximity induced superconductivity in a material with strong spin-orbit interactions. In two-dimensional systems, thin barriers are needed to allow strong…
We study distributed similarity estimation of quantum channels (DSEC), a primitive for cross-platform verification where two remote quantum devices are compared by estimating the inner product of their Choi states. We show that the optimal…
Magnetic traps for cold atoms have become a powerful tool of cold atom physics and condense matter research. The traps on superconducting chips allow one to increase the trapped atom life- and coherence time by decreasing the thermal noise…
Two-dimensional (2D) semiconductors are widely recognized as attractive channel materials for low-power electronics. However, an unresolved challenge is the integration of high-quality, ultrathin high-\k{appa} dielectrics that fully meet…
Unlike covalent two-dimensional (2D) materials like graphene, 2D metals have non-layered structures due to their non-directional, metallic bonding. While experiments on 2D metals are still scarce and challenging, density-functional theory…
Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDCs) and black phosphorus (BP) have beneficial electronic, optical, and physical properties at the few-layer limit. As atomically thin materials, 2D TMDCs and BP are…
Topological insulator field-effect transistors (TIFETs) built on 2-D quantum spin Hall insulators are being considered as advanced logic transistors due to their potentially superior performance originating from the dissipationless edge…
High transition temperature (high-Tc) superconductivity is associated with layered crystal structures. This work considers superconductivity in ultra-thin crystals (of thickness equal to the transverse structural periodicity distance d for…
Two-dimensional transition-metal dichalcogenides (TMDs) have attracted interest as post-Si channel candidates in transistor technology. However, despite their potential benefits, controllably doping TMDs has proven difficult. In this work,…
The CRESST experiment aims at the direct detection of sub-GeV dark matter particles via elastic scattering off nuclei in different target crystals at cryogenic temperatures. The advancement in W-TES sensors allowed the CRESST detectors to…