Related papers: Channel thickness optimization for ultra thin and …
The reliable operation of micro and nanomechanical devices necessitates a thorough knowledge of the water film thickness present on the surfaces of these devices with an accuracy in the nm range. In this work, the thickness of an ultra-thin…
Understanding ion-transport under molecular confinement is essential for developing next-generation energy technologies, where ionic motion often occurs within nanoscale or angstrom-scale channels. In this study, we use the model system of…
Two-dimensional transitional metal dichalcogenide (TMD) field-effect transistors (FETs) are promising candidates for future electronic applications, owing to their excellent transport properties and potential for ultimate device scaling.…
Perfect channel estimation is very hard, time/ power consuming, and expensive; so it is not preferred (e.g. in mobile) communication systems. This paper seeks for new, cheap, low complexity, deep learning based solution. Several new…
The triple heterojunction TFET has been originally proposed to resolve TFET's low ON-current challenge. The carrier transport in such devices is complicated due to the presence of quantum wells and strong scattering. Hence, the full band…
Bipolar carrier transport is often a limiting factor in the thermoelectric efficiency of narrow bandgap materials at high temperatures due to the reduction in the Seebeck coefficient and the introduction of an additional term to the thermal…
How thick should the sample be for a transmission THz-TDS measurement? Should the sample be as thick as possible? The answer is `no'. Although more thickness allows T-rays to interact more with bulk material, SNR rolls off with thickness…
The integration of two-dimensional materials such as transition metal dichalcogenides with bulk semiconductors offer interesting opportunities for 2D/3D heterojunction-based novel device structures without any constraints of lattice…
We report on the transport and low-frequency noise measurements of MoS2 thin-film transistors with "thin" (2-3 atomic layers) and "thick" (15-18 atomic layers) channels. The back-gated transistors made with the relatively thick MoS2…
High-quality FeSe tapes have been prepared by using a diffusion method. By adjusting the reaction temperature and the thickness systematically, a transport critical current density as high as 600 A/cm2 at 4.2 K under self field is achieved.…
Transport in InAs/GaSb heterostructures with different InAs layer thicknesses is studied using a six-terminal Hall bar geometry with a 2-$\mu$m edge channel length. For a sample with a 12-nm-thick InAs layer, non-local resistance…
Improving the coherence of superconducting qubits is essential for advancing quantum technologies. While superconductors are theoretically perfect conductors, they consistently exhibit residual energy dissipation when driven by microwave…
Nano-structuring is an extremely promising path to high performance thermoelectrics. Favorable improvements in thermal conductivity are attainable in many material systems, and theoretical work points to large improvements in electronic…
HTS are feasible for hight power applications because of the smaller consumption demand of the cooling system in comparison to the whole power device. Real industral devices contain superconductors with 2D and 3D geometry (coated conductors…
Two-dimensional semiconductors are structurally ideal channel materials for the ultimate atomic electronics after silicon era. A long-standing puzzle is the low carrier mobility ({\mu}) in them as compared with corresponding bulk…
Reducing device volume is one of the key requirements for advanced nanophotonic technologies, however this demand is often at odds with designing highly absorbing elements which usually require sizeable thicknesses, such as for detector and…
In ideal topological insulator (TI) films the bulk state, which is supposed to be insulating, should not provide any electric coupling between the two metallic surfaces. However, transport studies on existing TI films show that the…
Electrical field control of the carrier density of topological insulators (TI) has greatly expanded the possible practical use of these materials. However, the combination of low temperature local probe studies and a gate tunable TI device…
In the past decade, detection of THz radiation by plasma-wave-assisted frequency mixing in antenna-coupled field-effect transistors (TeraFETs) -- implemented in various semiconductor material systems (Si CMOS, GaN/AlGaN, GaAs/AlGaAs,…
Device passivation through ultraclean hexagonal BN encapsulation is proven one of the most effective ways for constructing high-quality devices with atomically thin semiconductors that preserves the ultraclean interface quality and…